STMicroelectronics BD678

Name: BD678
Brand: STMicroelectronics
SKU: 2463761-BD678
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD678

Manufacturer:: STMicroelectronics

Ventron No:: 2463761-BD678

Description:: TRANS PNP DARL 60V 4A SOT-32

ECAD Model:

Datasheet:: BD678

Specifications

STMicroelectronics BD678 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD678.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Current Rating
-4A
Base Part Number
BD678
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
11.05mm
Length
7.8mm
Width
2.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD678 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD678 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz

BD678 Applications
There are a lot of STMicroelectronics
BD678 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD678 More Descriptions

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 60 V 4 A Complementary Darlington Transistor - SOT-32
DARLINGTON TRANSISTOR, TO-126; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:750; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:4A; Collector Emitter Voltage Vces:-2.5V; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1.5A; Device Marking:BD678; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:60V

Product Comparison

The three parts on the right have similar specifications to BD678.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Surface Mount

Published

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Halogen Free

View Compare
BD678

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

40W

-4A

BD678

3

1

PNP

Single

40W

ISOLATED

SWITCHING

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

10MHz

2.5V

60V

5V

750

11.05mm

7.8mm

2.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

BD678 vs BD679
BD675G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

14 Weeks

-

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

40W

4A

BD675

3

1

NPN

Single

40W

-

AMPLIFIER

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

1MHz

2.5V

45V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

2005

yes

Tin (Sn)

260

40

Halogen Free

BD678 vs BD675G
BD678G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

Tin

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

40W

-4A

BD678

3

1

PNP

Single

40W

-

AMPLIFIER

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

200MHz

2.5V

60V

5V

750

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

1995

yes

-

260

40

Halogen Free

BD678 vs BD678G