STMicroelectronics BD677

Name: BD677
Brand: STMicroelectronics
SKU: 2845408-BD677
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD677

Manufacturer:: STMicroelectronics

Ventron No:: 2845408-BD677

Description:: TRANS NPN DARL 60V 4A SOT-32

ECAD Model:

Datasheet:: BD677

Specifications

STMicroelectronics BD677 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD677.

Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Transistor Type:
NPN - Darlington
Supplier Device Package:
SOT-32-3
Series:
-
Power - Max:
40W
Packaging:
Tube
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Current - Collector Cutoff (Max):
500µA
Current - Collector (Ic) (Max):
4A

Description

part No. BD677 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

BD677 More Descriptions

Bipolar (Bjt) Single Transistor, Darlington, Npn, 60 V, 40 W, 4 A, 750 Rohs Compliant: Yes |Stmicroelectronics BD677
BD6xxx Series NPN 60 V 4 A Complementary Power Darlington Transistor - SOT-32-3
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3 Tab) SOT-32 Tube
Transistor NPN Darlington BD677 SGS THOMSON Ampere=4 TO126
DARLINGTON Transistor, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:40W;
TRANSISTOR, DARLINGTON TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 10A; DC Current Gain hFE: 750hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 4A; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 1.5A; Full Power Rating Temperature: 25°C; Hfe Min: 750; No. of Transistors: 1; Power Dissipation Ptot Max: 40W; Transistor Type: Power Darlington; Voltage Vcbo: 60V

Product Comparison

The three parts on the right have similar specifications to BD677.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

View Compare
BD677

STMicroelectronics

60V

2.5V @ 30mA, 1.5A

NPN - Darlington

SOT-32-3

-

40W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD677 vs BD679
BD675G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 week ago)

14 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

SILICON

-55°C~150°C TJ

Bulk

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

45V

40W

260

4A

40

BD675

3

1

NPN

Single

40W

AMPLIFIER

Halogen Free

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

1MHz

2.5V

45V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

BD677 vs BD675G
BD678G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

5 Weeks

Through Hole

TO-225AA, TO-126-3

NO

3

SILICON

-55°C~150°C TJ

Bulk

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-60V

40W

260

-4A

40

BD678

3

1

PNP

Single

40W

AMPLIFIER

Halogen Free

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

200MHz

2.5V

60V

5V

750

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

BD677 vs BD678G