ON Semiconductor BD676A

Name: BD676A
Brand: ON Semiconductor
SKU: 2847057-BD676A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD676A

Manufacturer:: ON Semiconductor

Ventron No:: 2847057-BD676A

Description:: TRANS PNP DARL 45V 4A TO225

ECAD Model:

Datasheet:: BD676A

Specifications

ON Semiconductor BD676A technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD676A.

Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
4A
RoHS Status
Non-RoHS Compliant

Description

BD676A Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BD676A Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 2.8V @ 40mA, 2A

BD676A Applications
There are a lot of Rochester Electronics, LLC
BD676A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD676A More Descriptions

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANS PNP DARL 45V 4A TO225

Product Comparison

The three parts on the right have similar specifications to BD676A.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Polarity

Element Configuration

Power Dissipation

Halogen Free

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Contact Plating

View Compare
BD676A

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Bulk

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

SINGLE

240

unknown

30

3

R-PSFM-T3

COMMERCIAL

1

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

40W

AMPLIFIER

PNP

PNP - Darlington

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

45V

4A

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD676A vs BD679
BD675G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Bulk

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

-

260

-

40

3

-

-

1

-

-

AMPLIFIER

-

NPN - Darlington

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 week ago)

14 Weeks

3

2005

EAR99

Other Transistors

45V

40W

4A

BD675

NPN

Single

40W

Halogen Free

45V

4A

45V

1MHz

2.5V

45V

5V

750

11.04mm

7.74mm

2.66mm

No SVHC

No

Lead Free

-

BD676A vs BD675G
BD678G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Bulk

e3

yes

Active

1 (Unlimited)

3

-

-

260

-

40

3

-

-

1

-

-

AMPLIFIER

-

PNP - Darlington

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

5 Weeks

3

1995

EAR99

Other Transistors

-60V

40W

-4A

BD678

PNP

Single

40W

Halogen Free

60V

4A

60V

200MHz

2.5V

60V

5V

750

-

-

-

No SVHC

No

Lead Free

Tin

BD676A vs BD678G