ON Semiconductor BD243CG

Name: BD243CG
Brand: ON Semiconductor
SKU: 2464727-BD243CG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD243CG

Manufacturer:: ON Semiconductor

Ventron No:: 2464727-BD243CG

Description:: TRANS NPN 100V 6A TO220AB

ECAD Model:

Datasheet:: BD243CG

Specifications

ON Semiconductor BD243CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD243CG.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
65W
Peak Reflow Temperature (Cel)
260
Current Rating
6A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BD243
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
65W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
15.75mm
Length
10.28mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD243CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.

BD243CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

BD243CG Applications
There are a lot of ON Semiconductor
BD243CG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD243CG More Descriptions

Bipolar Transistor, NPN 6 A 100 V HFE:15 1 MHz Power Transistor, 3-Pin
ON Semi BD243CG NPN Bipolar Transistor, 6 A, 100 V, 3-Pin TO-220
BD243C Series 100 V 6 A Through Hole NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN 6A/100V 65W TO220 BD 243 CG
TO-220 Bipolar Transistors - BJT ROHS
Power Transistor, TO-220, NPN, 100V
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:30; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:PGP; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:30; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:65W; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:80V
Bipolar Transistor, Npn, 100V, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:65W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi BD243CG

Product Comparison

The three parts on the right have similar specifications to BD243CG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Power - Max

Continuous Collector Current

Supplier Device Package

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BD243CG

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

6 Weeks

Tin

Through Hole

TO-220-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

100V

65W

260

6A

3MHz

40

BD243

3

1

Single

65W

COLLECTOR

SWITCHING

3MHz

NPN

NPN

100V

6A

15 @ 3A 4V

700μA

TO-220AB

1.5V @ 1A, 6A

100V

3MHz

1.5V

100V

5V

30

15.75mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
BD242A-S

Bourns Inc.

-

-

-

Through Hole

TO-220-3

-

3

-

-65°C~150°C TJ

Tube

1993

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

Other Transistors

-

40W

-

-

-

-

BD242

-

1

Single

40W

-

-

-

PNP

PNP

60V

3A

25 @ 1A 4V

300μA

-

1.2V @ 600mA, 3A

60V

-

-

-

5V

-

-

-

-

-

No

ROHS3 Compliant

-

Through Hole

2W

3A

-

-

-

BD243CG vs BD242A-S
BD242TU

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

BD242

-

-

-

-

-

-

-

-

PNP

-

-

25 @ 1A 4V

300μA

-

1.2V @ 600mA, 3A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

40W

-

TO-220-3

45V

3A

BD243CG vs BD242TU
BD244C-S

Bourns Inc.

-

-

-

Through Hole

TO-220-3

-

3

-

-65°C~150°C TJ

Tube

1993

-

-

Obsolete

1 (Unlimited)

-

EAR99

-

Other Transistors

-

65W

-

-

-

-

BD244

-

1

Single

65W

-

-

-

PNP

PNP

100V

6A

15 @ 3A 4V

700μA

-

1.5V @ 1A, 6A

100V

-

-

-

5V

-

-

-

-

-

No

ROHS3 Compliant

-

Through Hole

2W

6A

-

-

-

BD243CG vs BD244C-S