Bourns Inc. BD242A-S
- Part Number:
- BD242A-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 3813527-BD242A-S
- Description:
- TRANS PNP 60V 3A
- Datasheet:
- BD242x
Bourns Inc. BD242A-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. BD242A-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation40W
- Base Part NumberBD242
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Power - Max2W
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
- Collector Emitter Breakdown Voltage60V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current3A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BD242A-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 600mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 3A volts.
BD242A-S Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
BD242A-S Applications
There are a lot of Bourns Inc.
BD242A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 600mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 3A volts.
BD242A-S Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
BD242A-S Applications
There are a lot of Bourns Inc.
BD242A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD242A-S More Descriptions
Trans GP BJT PNP 60V 3A 3-Pin(3 Tab) TO-220
The three parts on the right have similar specifications to BD242A-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationPower DissipationPower - MaxPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageEmitter Base Voltage (VEBO)Continuous Collector CurrentRadiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishPin CountCase ConnectionTransistor ApplicationJEDEC-95 CodeLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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BD242A-SThrough HoleThrough HoleTO-220-33-65°C~150°C TJTube1993Obsolete1 (Unlimited)EAR99Other Transistors40WBD2421Single40W2WPNPPNP60V3A25 @ 1A 4V300μA1.2V @ 600mA, 3A60V5V3ANoROHS3 Compliant-------------------------
-
Through HoleThrough HoleTO-220-33-65°C~150°C TJTube1993Obsolete1 (Unlimited)EAR99Other Transistors40WBD2421Single40W2WPNPPNP45V3A25 @ 1A 4V300μA1.2V @ 600mA, 3A45V5V3ANoROHS3 CompliantSILICONe1yes3TIN SILVER COPPER3COLLECTORSWITCHINGTO-220ABLead Free--------------
-
Through HoleThrough HoleTO-220-33-65°C~150°C TJTube1993Obsolete1 (Unlimited)EAR99Other Transistors65WBD2441Single65W2WPNPPNP100V6A15 @ 3A 4V700μA1.5V @ 1A, 6A100V5V6ANoROHS3 Compliant------------------------
-
---------------------------------------100V1.5V @ 1A, 6ANPNTO-220-65WBulkTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A
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