ON Semiconductor BD242C
- Part Number:
- BD242C
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2847488-BD242C
- Description:
- TRANS PNP 100V 3A TO220AB
- Datasheet:
- BD242/A/B/C TO220B03 Pkg Drawing
ON Semiconductor BD242C technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD242C.
- Surface MountNO
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- Terminal PositionSINGLE
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- JEDEC-95 CodeTO-220AB
- Transition Frequency3MHz
- Collector Current-Max (IC)3A
- DC Current Gain-Min (hFE)10
- Collector-Emitter Voltage-Max100V
- RoHS StatusNon-RoHS Compliant
BD242C Overview
There is a transition frequency of 3MHz in the part.100V is the maximum collector-emitter voltage setting.
BD242C Features
a transition frequency of 3MHz
BD242C Applications
There are a lot of Rochester Electronics, LLC
BD242C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
There is a transition frequency of 3MHz in the part.100V is the maximum collector-emitter voltage setting.
BD242C Features
a transition frequency of 3MHz
BD242C Applications
There are a lot of Rochester Electronics, LLC
BD242C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD242C More Descriptions
Tube Through Hole PNP Single Bipolar (BJT) Transistor 25 @ 1A 4V 3A 40W 3MHz
Trans GP BJT PNP 100V 3A 3-Pin(3 Tab) TO-220AB Bulk
3.0 A, 100 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP TO-220; Transistor Type:Power General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Min Hfe:25; Case Style:TO-220 (SOT-78B); Application Code:GP; Current Ic Max:3A; Current Ic hFE:1A; No. of Pins:3; Power, Ptot:40W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; ft, Min:3MHz
Trans GP BJT PNP 100V 3A 3-Pin(3 Tab) TO-220AB Bulk
3.0 A, 100 V PNP Bipolar Power Transistor
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP TO-220; Transistor Type:Power General Purpose; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:100V; Min Hfe:25; Case Style:TO-220 (SOT-78B); Application Code:GP; Current Ic Max:3A; Current Ic hFE:1A; No. of Pins:3; Power, Ptot:40W; Temperature, Full Power Rating:25°C; Transistors, No. of:1; ft, Min:3MHz
The three parts on the right have similar specifications to BD242C.
-
ImagePart NumberManufacturerSurface MountTransistor Element MaterialJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxRoHS StatusMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedECCN CodeSubcategoryMax Power DissipationBase Part NumberElement ConfigurationPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageEmitter Base Voltage (VEBO)Continuous Collector CurrentRadiation HardeningLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)VCEsat-MaxPower Dissipation Ambient-MaxView Compare
-
BD242CNOSILICONe3yesObsolete1 (Unlimited)3MATTE TINLEADFORM OPTIONS ARE AVAILABLESINGLETHROUGH-HOLE260unknown403R-PSFM-T3COMMERCIAL1SINGLECOLLECTORSWITCHINGPNPTO-220AB3MHz3A10100VNon-RoHS Compliant--------------------------------------------
-
-SILICONe1yesObsolete1 (Unlimited)3TIN SILVER COPPER------3--1-COLLECTORSWITCHINGPNPTO-220AB----ROHS3 CompliantThrough HoleThrough HoleTO-220-33-65°C~150°C TJTube1993EAR99Other Transistors40WBD242Single40W2WPNP45V3A25 @ 1A 4V300μA1.2V @ 600mA, 3A45V5V3ANoLead Free------------------
-
-----------------------------------------------------100V1.5V @ 1A, 6ANPNTO-220-65WBulkTO-220-3150°C (TJ)Through Hole-15 @ 3A, 4V700µA6A----
-
NOSILICON--Obsolete1 (Unlimited)3--SINGLE--unknown--R-PSFM-T3Not Qualified1SINGLE--NPNTO-220AB2MHz-----Through HoleTO-220-3-150°C TJBulk----BD243--65WNPN--15 @ 3A 4V700μA1.5V @ 1A, 6A-------------------60V6A1.5 V65W
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