STMicroelectronics BD242B

Name: BD242B
Brand: STMicroelectronics
SKU: 2463617-BD242B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD242B

Manufacturer:: STMicroelectronics

Ventron No:: 2463617-BD242B

Description:: TRANS PNP 80V 3A TO-220

ECAD Model:

Datasheet:: BD242/A/B/C TO220B03 Pkg Drawing BD241-42A/B/C

Specifications

STMicroelectronics BD242B technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD242B.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
3A
RoHS Status
ROHS3 Compliant

Description

BD242B Overview
In this device, the DC current gain is 25 @ 1A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 600mA, 3A.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BD242B Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A

BD242B Applications
There are a lot of Rochester Electronics, LLC
BD242B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD242B More Descriptions

BD242B Series PNP 80 V 3 A 2 W Through Hole Bipolar Transistor - TO-220
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 3A 3-Pin(3 Tab) TO-220 - Rail/Tube
Bipolar Transistors - BJT PNP General Purpose
Transistor, Pnp, -80V, -3A, To-220; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-80V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD242B

Product Comparison

The three parts on the right have similar specifications to BD242B.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Mount

Number of Pins

Operating Temperature

Published

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Element Configuration

Power Dissipation

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Emitter Base Voltage (VEBO)

Continuous Collector Current

Radiation Hardening

Case Connection

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
BD242B

STMicroelectronics

Through Hole

TO-220-3

NO

SILICON

Tube

e0

yes

Obsolete

1 (Unlimited)

3

TIN LEAD

SINGLE

240

unknown

30

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

2W

SWITCHING

PNP

PNP

25 @ 1A 4V

300μA

TO-220AB

1.2V @ 600mA, 3A

80V

3A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD242A-S

Bourns Inc.

Through Hole

TO-220-3

-

-

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

1

-

2W

-

PNP

PNP

25 @ 1A 4V

300μA

-

1.2V @ 600mA, 3A

-

-

ROHS3 Compliant

Through Hole

3

-65°C~150°C TJ

1993

EAR99

Other Transistors

40W

BD242

Single

40W

60V

3A

60V

5V

3A

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD242B vs BD242A-S
BD242-S

Bourns Inc.

Through Hole

TO-220-3

-

SILICON

Tube

e1

yes

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

-

-

-

-

3

-

-

1

-

2W

SWITCHING

PNP

PNP

25 @ 1A 4V

300μA

TO-220AB

1.2V @ 600mA, 3A

-

-

ROHS3 Compliant

Through Hole

3

-65°C~150°C TJ

1993

EAR99

Other Transistors

40W

BD242

Single

40W

45V

3A

45V

5V

3A

No

COLLECTOR

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD242B vs BD242-S
BD243C

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

1.5V @ 1A, 6A

NPN

TO-220

-

65W

Bulk

TO-220-3

150°C (TJ)

Through Hole

-

15 @ 3A, 4V

700µA

6A

BD242B vs BD243C