Fairchild/ON Semiconductor BD13910STU

Name: BD13910STU
Brand: Fairchild/ON Semiconductor
SKU: 2464876-BD13910STU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD13910STU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2464876-BD13910STU

Description:: TRANS NPN 80V 1.5A TO-126

ECAD Model:

Datasheet:: BD135/137/139

Specifications

Fairchild/ON Semiconductor BD13910STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD13910STU.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.25W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
1.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD139
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11.2mm
Length
8.3mm
Width
3.45mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD13910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).250MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.

BD13910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz

BD13910STU Applications
There are a lot of ON Semiconductor
BD13910STU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD13910STU More Descriptions

Bipolar (BJT) Single Transistor, NPN, 80 V, 12.5 W, 1.5 A, 63
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Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 63hFE; Transis

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