BCX56-16,147

Nexperia USA Inc. BCX56-16,147

Part Number:
BCX56-16,147
Manufacturer:
Nexperia USA Inc.
Ventron No:
2462734-BCX56-16,147
Description:
TRANS NPN 80V 1A SOT89
ECAD Model:
Datasheet:
BCX56-16,147

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Specifications
Nexperia USA Inc. BCX56-16,147 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-16,147.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    1.25W
  • Frequency
    180MHz
  • Base Part Number
    BCX56
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.25W
  • Gain Bandwidth Product
    180MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BCX56-16,147 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX56-16,147 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCX56-16,147 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,147 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX56-16,147 More Descriptions
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX56-16,147
80V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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