Nexperia USA Inc. BCX56-16,147
- Part Number:
- BCX56-16,147
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2462734-BCX56-16,147
- Description:
- TRANS NPN 80V 1A SOT89
- Datasheet:
- BCX56-16,147
Nexperia USA Inc. BCX56-16,147 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX56-16,147.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation1.25W
- Frequency180MHz
- Base Part NumberBCX56
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.25W
- Gain Bandwidth Product180MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCX56-16,147 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX56-16,147 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX56-16,147 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,147 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX56-16,147 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCX56-16,147 Applications
There are a lot of Nexperia USA Inc.
BCX56-16,147 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX56-16,147 More Descriptions
Trans GP BJT NPN 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX56-16,147
80V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BCX56-Q series - 80 V, 1 A NPN medium power transistors
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX56-16,147
80V 500mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BCX56-Q series - 80 V, 1 A NPN medium power transistors
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