Diodes Incorporated BCX5516TA

Name: BCX5516TA
Brand: Diodes Incorporated
SKU: 2845791-BCX5516TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX5516TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2845791-BCX5516TA

Description:: TRANS NPN 60V 1A SOT89

ECAD Model:

Datasheet:: BCX5516TA

Specifications

Diodes Incorporated BCX5516TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX5516TA.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
HIGH RELIABILITY
Voltage - Rated DC
60V
Max Power Dissipation
1W
Terminal Form
FLAT
Current Rating
1A
Frequency
150MHz
Base Part Number
BCX5516
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
25pF
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BCX5516TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.

BCX5516TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

BCX5516TA Applications
There are a lot of Diodes Incorporated
BCX5516TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX5516TA More Descriptions

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
BCX55 Series NPN 2 W 60 V 1 A Surface Mount Power Transistor - SOT-89
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R / TRANS NPN 60V 1A SOT89
Trans, Npn, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCX5516TA

Certification