Fairchild/ON Semiconductor BCW60C
- Part Number:
- BCW60C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585327-BCW60C
- Description:
- TRANS NPN 32V 0.1A SOT-23
- ECAD Model:
-
- Datasheet:
- BCW60A/B/C/D
Fairchild/ON Semiconductor BCW60C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCW60C.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Weight30mg
- PackagingTape & Reel (TR)
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Voltage - Rated DC32V
- Max Power Dissipation350mW
- Current Rating100mA
- Frequency125MHz
- Base Part NumberBCW60
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation350mW
- Power - Max350mW
- Gain Bandwidth Product125MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)32V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2mA 5V
- Current - Collector Cutoff (Max)20nA
- Vce Saturation (Max) @ Ib, Ic550mV @ 1.25mA, 50mA
- Collector Emitter Breakdown Voltage32V
- Voltage - Collector Emitter Breakdown (Max)32V
- Current - Collector (Ic) (Max)100mA
- Collector Emitter Saturation Voltage550mV
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)32V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BCW60C Overview
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 550mV.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package SOT-23-3 comes from the supplier.Collector Emitter Breakdown occurs at 32VV - Maximum voltage.A maximum collector current of 100mA volts is possible.
BCW60C Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
the supplier device package of SOT-23-3
BCW60C Applications
There are a lot of ON Semiconductor
BCW60C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 550mV.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package SOT-23-3 comes from the supplier.Collector Emitter Breakdown occurs at 32VV - Maximum voltage.A maximum collector current of 100mA volts is possible.
BCW60C Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
the supplier device package of SOT-23-3
BCW60C Applications
There are a lot of ON Semiconductor
BCW60C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCW60C More Descriptions
Transistor GP BJT NPN 32V 100mA 3-Pin Surface Mount SOT-23
NPN/ 32V/ 100MA/ HFE 250-460 @VCE=5V, IC=2MA/ PKG 49
Small Signal Bipolar Transistor
NPN/ 32V/ 100MA/ HFE 250-460 @VCE=5V, IC=2MA/ PKG 49
Small Signal Bipolar Transistor
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