Fairchild/ON Semiconductor BCW32
- Part Number:
- BCW32
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467423-BCW32
- Description:
- TRANS NPN 32V 0.5A SOT-23
- Datasheet:
- BCW32
Fairchild/ON Semiconductor BCW32 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCW32.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC32V
- Max Power Dissipation350mW
- Current Rating500mA
- Base Part NumberBCW32
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)32V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage32V
- Collector Emitter Saturation Voltage250mV
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)32V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BCW32 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Collector current can be as low as 500mA volts at its maximum.
BCW32 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
BCW32 Applications
There are a lot of ON Semiconductor
BCW32 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Collector current can be as low as 500mA volts at its maximum.
BCW32 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
BCW32 Applications
There are a lot of ON Semiconductor
BCW32 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCW32 More Descriptions
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Small Signal Bipolar Transistor
FAIRCHILD BCW32 / IC,NPN AMP,SOT23
Small Signal Bipolar Transistor
FAIRCHILD BCW32 / IC,NPN AMP,SOT23
The three parts on the right have similar specifications to BCW32.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyVCEsat-MaxCollector-Base Capacitance-MaxLifecycle StatusFactory Lead TimeContact PlatingSurface MountJESD-609 CodePbfree CodeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountMax Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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BCW32Surface MountSurface MountTO-236-3, SC-59, SOT-23-3330mg-55°C~150°C TJTape & Reel (TR)2005Obsolete1 (Unlimited)32V350mW500mABCW321Single350mWNPN32V500mA200 @ 2mA 5V100nA ICBO250mV @ 500μA, 10mA32V250mV200MHz32V5V200RoHS CompliantLead Free--------------------------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3---Tape & Reel (TR)-Active1 (Unlimited)32V-100mA-1--NPN-100mA110 @ 2mA 5V--32V-----ROHS3 CompliantLead FreeSILICON3EAR998541.21.00.75DUALGULL WINGR-PDSO-G3Not Qualified150°CSINGLEAMPLIFIERNPN300MHz0.3 V4pF----------------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3---Tape & Reel (TR)2016Active1 (Unlimited)32V-100mA-1--NPN-100mA420 @ 2mA 5V--32V-----ROHS3 CompliantLead FreeSILICON3EAR998541.21.00.75DUALGULL WINGR-PDSO-G3Not Qualified150°CSINGLEAMPLIFIERNPN300MHz0.3 V4pF----------------
-
-Surface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)2005Active1 (Unlimited)32V300mW100mABCW331Single300mWNPN32V100mA420 @ 2mA 5V100nA ICBO250mV @ 500μA, 10mA32V250mV-32V5V420ROHS3 CompliantLead FreeSILICON3EAR99-DUALGULL WING----SWITCHINGNPN---ACTIVE (Last Updated: 3 days ago)2 WeeksTinYESe3yesOther Transistors26040332V940μm2.9mm1.3mmNo SVHCNo
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