BCW 66F E6327

Infineon Technologies BCW 66F E6327

Part Number:
BCW 66F E6327
Manufacturer:
Infineon Technologies
Ventron No:
3553940-BCW 66F E6327
Description:
TRANS NPN 45V 0.8A SOT-23
ECAD Model:
Datasheet:
BCW 66F E6327

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Specifications
Infineon Technologies BCW 66F E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCW 66F E6327.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BCW66
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    330mW
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    20nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    450mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    800mA
  • Transition Frequency
    170MHz
  • Frequency - Transition
    170MHz
  • Power Dissipation-Max (Abs)
    0.33W
  • RoHS Status
    RoHS Compliant
Description
BCW 66F E6327 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BCW 66F E6327 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
a transition frequency of 170MHz


BCW 66F E6327 Applications
There are a lot of Infineon Technologies
BCW 66F E6327 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCW 66F E6327 More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Surface Mount Lead Free Tape & Reel (TR) TO-236-3 800 mA 45 V 170 MHz
TRANS NPN 45V 0.8A SOT-23
Product Comparison
The three parts on the right have similar specifications to BCW 66F E6327.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    RoHS Status
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Transistor Application
    View Compare
  • BCW 66F E6327
    BCW 66F E6327
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    DUAL
    GULL WING
    260
    compliant
    NOT SPECIFIED
    BCW66
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    330mW
    NPN
    NPN
    100 @ 100mA 1V
    20nA ICBO
    450mV @ 50mA, 500mA
    45V
    800mA
    170MHz
    170MHz
    0.33W
    RoHS Compliant
    -
    -
    -
    -
    -
  • BCW60D
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    DUAL
    GULL WING
    260
    unknown
    40
    -
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE
    350mW
    NPN
    NPN
    380 @ 2mA 5V
    20nA
    550mV @ 1.25mA, 50mA
    32V
    100mA
    250MHz
    125MHz
    -
    ROHS3 Compliant
    e3
    yes
    MATTE TIN
    SWITCHING
  • BCW 66H E6327
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    DUAL
    GULL WING
    260
    compliant
    NOT SPECIFIED
    BCW66
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    330mW
    NPN
    NPN
    250 @ 100mA 1V
    20nA ICBO
    450mV @ 50mA, 500mA
    45V
    800mA
    170MHz
    170MHz
    0.33W
    RoHS Compliant
    -
    -
    -
    -
  • BCW 67A E6327
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2010
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    DUAL
    GULL WING
    260
    compliant
    40
    BCW67
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    330mW
    PNP
    PNP
    100 @ 100mA 1V
    20nA ICBO
    700mV @ 50mA, 500mA
    32V
    800mA
    200MHz
    200MHz
    0.33W
    RoHS Compliant
    e3
    -
    MATTE TIN
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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