Infineon Technologies BCW 66F E6327
- Part Number:
- BCW 66F E6327
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3553940-BCW 66F E6327
- Description:
- TRANS NPN 45V 0.8A SOT-23
- Datasheet:
- BCW 66F E6327
Infineon Technologies BCW 66F E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCW 66F E6327.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCW66
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max330mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic450mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)800mA
- Transition Frequency170MHz
- Frequency - Transition170MHz
- Power Dissipation-Max (Abs)0.33W
- RoHS StatusRoHS Compliant
BCW 66F E6327 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BCW 66F E6327 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
a transition frequency of 170MHz
BCW 66F E6327 Applications
There are a lot of Infineon Technologies
BCW 66F E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BCW 66F E6327 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
a transition frequency of 170MHz
BCW 66F E6327 Applications
There are a lot of Infineon Technologies
BCW 66F E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCW 66F E6327 More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Compliant Surface Mount Lead Free Tape & Reel (TR) TO-236-3 800 mA 45 V 170 MHz
TRANS NPN 45V 0.8A SOT-23
Compliant Surface Mount Lead Free Tape & Reel (TR) TO-236-3 800 mA 45 V 170 MHz
TRANS NPN 45V 0.8A SOT-23
The three parts on the right have similar specifications to BCW 66F E6327.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)RoHS StatusJESD-609 CodePbfree CodeTerminal FinishTransistor ApplicationView Compare
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BCW 66F E6327Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2011Obsolete1 (Unlimited)3EAR99Other TransistorsDUALGULL WING260compliantNOT SPECIFIEDBCW66R-PDSO-G3Not Qualified1SINGLE330mWNPNNPN100 @ 100mA 1V20nA ICBO450mV @ 50mA, 500mA45V800mA170MHz170MHz0.33WRoHS Compliant-----
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON-Tape & Reel (TR)-Obsolete1 (Unlimited)3--DUALGULL WING260unknown40-R-PDSO-G3COMMERCIAL1SINGLE350mWNPNNPN380 @ 2mA 5V20nA550mV @ 1.25mA, 50mA32V100mA250MHz125MHz-ROHS3 Compliante3yesMATTE TINSWITCHING
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2011Obsolete1 (Unlimited)3EAR99Other TransistorsDUALGULL WING260compliantNOT SPECIFIEDBCW66R-PDSO-G3Not Qualified1SINGLE330mWNPNNPN250 @ 100mA 1V20nA ICBO450mV @ 50mA, 500mA45V800mA170MHz170MHz0.33WRoHS Compliant----
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2010Obsolete1 (Unlimited)3EAR99Other TransistorsDUALGULL WING260compliant40BCW67R-PDSO-G3Not Qualified1SINGLE330mWPNPPNP100 @ 100mA 1V20nA ICBO700mV @ 50mA, 500mA32V800mA200MHz200MHz0.33WRoHS Compliante3-MATTE TIN-
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