Diodes Incorporated BCV46TA
- Part Number:
- BCV46TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845148-BCV46TA
- Description:
- TRANS PNP DARL 60V 0.5A SOT23-3
- Datasheet:
- BCV46TA
Diodes Incorporated BCV46TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCV46TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCV46
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power - Max330mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage60V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current-500mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCV46TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCV46TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46TA Applications
There are a lot of Diodes Incorporated
BCV46TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCV46TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 200MHz
BCV46TA Applications
There are a lot of Diodes Incorporated
BCV46TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCV46TA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCV46 Series 60 V 500 mA 330 mW PNP Silicon Planar Darlington Transistor-SOT23-3
10000@5V,100mA 60V PNP 500mA 330mW SOT-23 Darlington Transistors ROHS
Trans, Pnp, 60V, 0.5A, 150Deg C, 0.35W Rohs Compliant: Yes |Diodes Inc. BCV46TA
BCV46 Series 60 V 500 mA 330 mW PNP Silicon Planar Darlington Transistor-SOT23-3
10000@5V,100mA 60V PNP 500mA 330mW SOT-23 Darlington Transistors ROHS
Trans, Pnp, 60V, 0.5A, 150Deg C, 0.35W Rohs Compliant: Yes |Diodes Inc. BCV46TA
The three parts on the right have similar specifications to BCV46TA.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)SeriesTerminal FinishHTS CodeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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BCV46TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2012e3yesActive1 (Unlimited)3EAR99Other Transistors-60V330mWDUALGULL WING260-500mA40BCV4631PNPSingle330mWSWITCHINGPNP - Darlington60V500mA10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V200MHz1V60V200MHz80V10V-500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------------------
-
4 Weeks--Surface MountTO-236-3, SC-59, SOT-23-3--SILICON150°C TJTape & Reel (TR)2005-yesLast Time Buy1 (Unlimited)3EAR99---DUALGULL WINGNOT SPECIFIED-NOT SPECIFIEDBCV47-1--360mW-NPN - Darlington--10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA-170MHz--170MHz--------ROHS3 Compliant-YESR-PDSO-G3Not QualifiedNPN60V500mA-----------------
-
4 Weeks--Surface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3EAR99---DUALGULL WING---BCV4631PNP-250mWAMPLIFIERPNP - Darlington--10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA-220MHz--220MHz--------ROHS3 Compliant-YES---60V500mAAutomotive, AEC-Q101Tin (Sn)8541.21.00.75--------------
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--------------------------------------------------------------60V1V @ 100µA, 100mANPN - DarlingtonSOT-23-350mWTape & Reel (TR)TO-236-3, SC-59, SOT-23-3-65°C ~ 150°C (TJ)Surface Mount220MHz10000 @ 100mA, 5V100nA (ICBO)500mA
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