Fairchild/ON Semiconductor BCV27
- Part Number:
- BCV27
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463046-BCV27
- Description:
- TRANS NPN DARL 30V 1.2A SOT23
- Datasheet:
- BCV27
Fairchild/ON Semiconductor BCV27 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCV27.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.2A
- Base Part NumberBCV27
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency220MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage30V
- Frequency - Transition220MHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)10V
- hFE Min10000
- Height930μm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCV27 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 220MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.2A volts.
BCV27 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 220MHz
BCV27 Applications
There are a lot of ON Semiconductor
BCV27 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1.2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 220MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.2A volts.
BCV27 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
a transition frequency of 220MHz
BCV27 Applications
There are a lot of ON Semiconductor
BCV27 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCV27 More Descriptions
BCV Series NPN 350 mW 30 V 1.2 A SMT Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
The three parts on the right have similar specifications to BCV27.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Case ConnectionPower - MaxTransistor ApplicationHalogen FreeTerminal FinishHTS CodeReach Compliance CodePin CountJESD-30 CodeQualification StatusContinuous Collector CurrentView Compare
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BCV27ACTIVE (Last Updated: 2 days ago)17 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Other Transistors30V350mWDUALGULL WING1.2ABCV271NPNSingle350mWNPN - Darlington30V1.2A20000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA30V220MHz1V30V220MHz40V10V10000930μm2.92mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-26 WeeksTinSurface MountSurface MountTO-243AA3-SILICON150°C TJTape & Reel (TR)2011--Not For New Designs1 (Unlimited)3EAR99--1W-FLAT--1NPNSingle-NPN - Darlington30V500mA20000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA30V150MHz--150MHz40V-4000-----ROHS3 CompliantLead FreeAutomotive, AEC-Q101NOT SPECIFIEDNOT SPECIFIEDCOLLECTOR1WAMPLIFIERHalogen Free-------
-
-26 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJTape & Reel (TR)2006e3yesNot For New Designs1 (Unlimited)3EAR99Other Transistors30V360mWDUALGULL WING500mABCV271NPNSingle360mWNPN - Darlington1V500mA20000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA30V170MHz1V30V170MHz40V10V4000----NoROHS3 CompliantLead Free------Not Halogen Free-------
-
---Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)3EAR99-30V330mWDUALGULL WING500mABCV271NPNSingle-NPN - Darlington1V500mA20000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA30V170MHz-30V170MHz40V10V-1.1mm3mm1.4mm--RoHS CompliantLead Free-26040--SWITCHING-MATTE TIN8541.21.00.75unknown3R-PDSO-G3Not Qualified500mA
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