Nexperia USA Inc. BCP69,115

Name: BCP69,115
Brand: Nexperia USA Inc.
SKU: 3553783-BCP69,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP69,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3553783-BCP69,115

Description:: TRANS PNP 20V 1A SOT223

ECAD Model:

Datasheet:: BCP69,115

Specifications

Nexperia USA Inc. BCP69,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP69,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCP69
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.4W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Transition Frequency
40MHz
Frequency - Transition
140MHz
Power Dissipation Ambient-Max
1.5W
RoHS Status
ROHS3 Compliant

Description

BCP69,115 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.40MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 20V.

BCP69,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 40MHz

BCP69,115 Applications
There are a lot of Nexperia USA Inc.
BCP69,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP69,115 More Descriptions

Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP69 Series 20 V 1 A Surface Mount PNP Power Transistor - SOT-223
Trans GP BJT PNP 20V 2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
20V 650mW 2A 85@500mA,1V 140MHz 600mV@2A,200mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
20 V, 2 A PNP medium power transistor
Bipolar Transistor, Med Power, Pnp, -20V, -1A, 3Sot223, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:20V; Continuous Collector Current:2A; Power Dissipation:650Mw; Transistor Mounting:Surface Mount Rohs Compliant: Yes |Nexperia BCP69,115.
TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:650mW; DC Collector Current:-2A; DC Current Gain hFE:85; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)

Certification