Fairchild/ON Semiconductor BCP68
- Part Number:
- BCP68
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585295-BCP68
- Description:
- TRANS NPN 20V 1A SOT-223
- Datasheet:
- BCP68
Fairchild/ON Semiconductor BCP68 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCP68.
- Lifecycle StatusLIFETIME (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC20V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1A
- Base Part NumberBCP68
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA 1V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage20V
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min85
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP68 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP68 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BCP68 Applications
There are a lot of ON Semiconductor
BCP68 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP68 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BCP68 Applications
There are a lot of ON Semiconductor
BCP68 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP68 More Descriptions
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 20V 1A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 20V 1A SOT-223
Bipolar Transistors - BJT SOT-223 NPN GP AMP
(Legacy Fairchild) NPN Bipolar Transistor
10Ã×A 20V 1.5W 1A 85@500mA1V 500mV@1A100mA NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 20V, 1A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 60hFE; Transistor C
Trans GP BJT NPN 20V 1A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 20V 1A SOT-223
Bipolar Transistors - BJT SOT-223 NPN GP AMP
(Legacy Fairchild) NPN Bipolar Transistor
10Ã×A 20V 1.5W 1A 85@500mA1V 500mV@1A100mA NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 20V, 1A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 60hFE; Transistor C
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