BCP68

Fairchild/ON Semiconductor BCP68

Part Number:
BCP68
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585295-BCP68
Description:
TRANS NPN 20V 1A SOT-223
ECAD Model:
Datasheet:
BCP68

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Specifications
Fairchild/ON Semiconductor BCP68 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCP68.
  • Lifecycle Status
    LIFETIME (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    188mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    1.5W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    1A
  • Base Part Number
    BCP68
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.5W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    85 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    20V
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    20V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    85
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCP68 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

BCP68 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A


BCP68 Applications
There are a lot of ON Semiconductor
BCP68 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP68 More Descriptions
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 20V 1A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 20V 1A SOT-223
Bipolar Transistors - BJT SOT-223 NPN GP AMP
(Legacy Fairchild) NPN Bipolar Transistor
10Ã×A 20V 1.5W 1A 85@500mA1V 500mV@1A100mA NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 20V, 1A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: -; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 60hFE; Transistor C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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