STMicroelectronics BCP53-16
- Part Number:
- BCP53-16
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2467082-BCP53-16
- Description:
- TRANS PNP 80V 1A SOT-223
- ECAD Model:
-
- Datasheet:
- BCP53-16
STMicroelectronics BCP53-16 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BCP53-16.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Max Power Dissipation1.6W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCP53
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.6W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCP53-16 Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCP53-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCP53-16 Applications
There are a lot of STMicroelectronics
BCP53-16 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCP53-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCP53-16 Applications
There are a lot of STMicroelectronics
BCP53-16 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP53-16 More Descriptions
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
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80V 1.6W 1A 100@150mA,2V 50MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, PNP, -80V, -1A, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
Trans, Pnp, -80V, -1A, 150Deg C, 1.6W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Stmicroelectronics BCP53-16
TRANSISTOR, PNP, -80V, -1A, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.6W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Trans GP BJT PNP 80V 1A 1600mW Automotive 4-Pin(3 Tab) SOT-223 T/R
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80V 1.6W 1A 100@150mA,2V 50MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, PNP, -80V, -1A, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power
Trans, Pnp, -80V, -1A, 150Deg C, 1.6W; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Stmicroelectronics BCP53-16
TRANSISTOR, PNP, -80V, -1A, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.6W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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