Nexperia USA Inc. BC868-25,115
- Part Number:
- BC868-25,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3585266-BC868-25,115
- Description:
- TRANS NPN 20V 2A SOT89
- Datasheet:
- BC868-25,115
Nexperia USA Inc. BC868-25,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC868-25,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC868
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)2A
- Transition Frequency170MHz
- Frequency - Transition170MHz
- RoHS StatusROHS3 Compliant
BC868-25,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 1V.When VCE saturation is 600mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
BC868-25,115 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
a transition frequency of 170MHz
BC868-25,115 Applications
There are a lot of Nexperia USA Inc.
BC868-25,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 1V.When VCE saturation is 600mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
BC868-25,115 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
a transition frequency of 170MHz
BC868-25,115 Applications
There are a lot of Nexperia USA Inc.
BC868-25,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC868-25,115 More Descriptions
Supplied as a Tape, Nexperia BC868-25, 115 NPN Transistor, 2 A, 20 V, 3-Pin SOT-89
Trans GP BJT NPN 20V 2A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
20 V, 2 A NPN medium power transistor
20V 500mW 2A 160@500mA,1V 170MHz 600mV@2A,200mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR NPN 20V 1A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:160; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:170MHz; Hfe Min:160; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:General Purpose
Trans GP BJT NPN 20V 2A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
20 V, 2 A NPN medium power transistor
20V 500mW 2A 160@500mA,1V 170MHz 600mV@2A,200mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR NPN 20V 1A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:160; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:170MHz; Hfe Min:160; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:General Purpose
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