BC868-25,115

Nexperia USA Inc. BC868-25,115

Part Number:
BC868-25,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3585266-BC868-25,115
Description:
TRANS NPN 20V 2A SOT89
ECAD Model:
Datasheet:
BC868-25,115

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Specifications
Nexperia USA Inc. BC868-25,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC868-25,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.75
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BC868
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 200mA, 2A
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Current - Collector (Ic) (Max)
    2A
  • Transition Frequency
    170MHz
  • Frequency - Transition
    170MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC868-25,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 1V.When VCE saturation is 600mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.

BC868-25,115 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
a transition frequency of 170MHz


BC868-25,115 Applications
There are a lot of Nexperia USA Inc.
BC868-25,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC868-25,115 More Descriptions
Supplied as a Tape, Nexperia BC868-25, 115 NPN Transistor, 2 A, 20 V, 3-Pin SOT-89
Trans GP BJT NPN 20V 2A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
20 V, 2 A NPN medium power transistor
20V 500mW 2A 160@500mA,1V 170MHz 600mV@2A,200mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
TRANSISTOR NPN 20V 1A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:160; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:170MHz; Hfe Min:160; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:General Purpose
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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