Nexperia USA Inc. BC860CW,135

Name: BC860CW,135
Brand: Nexperia USA Inc.
SKU: 3585316-BC860CW,135
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC860CW,135

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3585316-BC860CW,135

Description:: TRANS PNP 45V 0.1A SOT323

ECAD Model:

Datasheet:: BC860CW,135

Specifications

Nexperia USA Inc. BC860CW,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC860CW,135.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW NOISE
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC860
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
5pF
RoHS Status
ROHS3 Compliant

Description

BC860CW,135 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC860CW,135 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC860CW,135 Applications
There are a lot of Nexperia USA Inc.
BC860CW,135 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC860CW,135 More Descriptions

Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC860CW,135
BC859W; BC860W - PNP general purpose transistors
Trans GP BJT PNP 45V 0.1A 3-Pin SC-70 T/R
TRANSISTOR PNP 45V 100MA SOT323
45V 200mW 100mA 420@2mA5V 100MHz 650mV@100mA5mA PNP 150¡Í@(Tj) SOT-323(SC-70) Bipolar Transistors - BJT ROHS

Certification