Nexperia USA Inc. BC868,115
- Part Number:
- BC868,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845743-BC868,115
- Description:
- TRANS NPN 20V 1A SOT89
- Datasheet:
- BC868,115
Nexperia USA Inc. BC868,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC868,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC868
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)1A
- Transition Frequency170MHz
- Frequency - Transition170MHz
- RoHS StatusROHS3 Compliant
BC868,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
BC868,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 170MHz
BC868,115 Applications
There are a lot of Nexperia USA Inc.
BC868,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 170MHz.The device has a 20V maximal voltage - Collector Emitter Breakdown.
BC868,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 170MHz
BC868,115 Applications
There are a lot of Nexperia USA Inc.
BC868,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC868,115 More Descriptions
Trans GP BJT NPN 20V 2A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
20 V, 2 A NPN medium power transistor
20V 500mW 2A 85@500mA,1V 170MHz 600mV@2A,200mA NPN 150¡æ@(Tj) SOT-89(SOT-89-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ, ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain Max (hfe):85 ;RoHS Compliant: Yes
20 V, 2 A NPN medium power transistor
20V 500mW 2A 85@500mA,1V 170MHz 600mV@2A,200mA NPN 150¡æ@(Tj) SOT-89(SOT-89-3) Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ, ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain Max (hfe):85 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BC868,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusPower DissipationSupplier Device PackageContact PlatingMountSeriesECCN CodeMax Power DissipationFrequencyElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Collector-Base Capacitance-MaxRadiation HardeningLead FreeView Compare
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BC868,1154 WeeksSurface MountTO-243AAYES3SILICON150°C TJTape & Reel (TR)1999e3Active1 (Unlimited)3Tin (Sn)8541.29.00.75SINGLEFLATNOT SPECIFIEDNOT SPECIFIEDBC8683Not Qualified1SINGLECOLLECTOR1.2WSWITCHINGNPNNPN85 @ 500mA 1V100nA ICBO500mV @ 100mA, 1A20V1A170MHz170MHzROHS3 Compliant-------------------
-
4 WeeksSurface MountTO-243AAYES3SILICON150°C TJTape & Reel (TR)2011e3Active1 (Unlimited)3Tin (Sn)8541.29.00.75SINGLEFLATNOT SPECIFIEDNOT SPECIFIEDBC8683Not Qualified1SINGLECOLLECTOR-SWITCHINGNPNNPN160 @ 500mA 1V100nA ICBO600mV @ 200mA, 2A20V2A170MHz170MHzROHS3 Compliant500mW-----------------
-
-Surface MountTO-236-3, SC-59, SOT-23-3---150°C TJTape & Reel (TR)2008-Discontinued1 (Unlimited)-------BC860-----330mW--PNP420 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V100mA-250MHzROHS3 Compliant-SOT-23-3----------------
-
4 WeeksSurface MountSC-70, SOT-323-3SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3--DUALGULL WING26040BC8603-1---AMPLIFIERPNPPNP220 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--100MHz-ROHS3 Compliant200mW-TinSurface MountAutomotive, AEC-Q101EAR99200mW100MHzSingle100MHz45V100mA45V50V5V5pFNoLead Free
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