Diodes Incorporated BC858BW-7-F

Name: BC858BW-7-F
Brand: Diodes Incorporated
SKU: 2465021-BC858BW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC858BW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2465021-BC858BW-7-F

Description:: TRANS PNP 30V 0.1A SC70-3

ECAD Model:

Datasheet:: BC858BW-7-F

Specifications

Diodes Incorporated BC858BW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC858BW-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC858
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC858BW-7-F Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 100mA volts is possible.

BC858BW-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC858BW-7-F Applications
There are a lot of Diodes Incorporated
BC858BW-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC858BW-7-F More Descriptions

Trans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R
Bipolar Transistors - BJT PNP BIPOLAR
PNP, 30V, 0.1A, SOT23,200MHzDiodes Inc SCT
PNP TRANS 30V 0,1A SOT323
OEMs, CMs ONLY (NO BROKERS)

Certification