ON Semiconductor BC858ALT1
- Part Number:
- BC858ALT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468429-BC858ALT1
- Description:
- TRANS PNP 30V 0.1A SOT-23
- Datasheet:
- BC858ALT1
ON Semiconductor BC858ALT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC858ALT1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusNon-RoHS Compliant
BC858ALT1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
BC858ALT1 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858ALT1 Applications
There are a lot of Rochester Electronics, LLC
BC858ALT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
BC858ALT1 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858ALT1 Applications
There are a lot of Rochester Electronics, LLC
BC858ALT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC858ALT1 More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 2mA 5V 100mA 300mW 100MHz
Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R
French Electronic Distributor since 1988
Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R
French Electronic Distributor since 1988
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