Diodes Incorporated BC856B-13-F

Name: BC856B-13-F
Brand: Diodes Incorporated
SKU: 2464901-BC856B-13-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856B-13-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2464901-BC856B-13-F

Description:: TRANS PNP 65V 0.1A SOT-23

ECAD Model:

Datasheet:: BC856B-13-F

Specifications

Diodes Incorporated BC856B-13-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC856B-13-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC856B
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15μA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Continuous Collector Current
-100mA
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC856B-13-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.

BC856B-13-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC856B-13-F Applications
There are a lot of Diodes Incorporated
BC856B-13-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856B-13-F More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 65V 0.1A 350mW 3-Pin SOT-23 T/R
Trans, Pnp, 65V, 0.1A, 150Deg C, 0.35W Rohs Compliant: Yes |Diodes Inc. BC856B-13-F

Certification