Diodes Incorporated BC848CW-7-F

Name: BC848CW-7-F
Brand: Diodes Incorporated
SKU: 2845965-BC848CW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC848CW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2845965-BC848CW-7-F

Description:: TRANS NPN 30V 0.1A SC70-3

ECAD Model:

Datasheet:: BC848CW-7-F

Specifications

Diodes Incorporated BC848CW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC848CW-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC848CW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.

BC848CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz

BC848CW-7-F Applications
There are a lot of Diodes Incorporated
BC848CW-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC848CW-7-F More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BC848CW Series NPN 30 V 100 mA SMT Small Signal Transistor - SOT-323
Trans, Npn, 30V, 0.1A, 150Deg C, 0.2W Rohs Compliant: Yes |Diodes Inc. BC848CW-7-F
Bipolar Transistors - BJT NPN BIPOLAR

Certification