BC848CT116

Rohm Semiconductor BC848CT116

Part Number:
BC848CT116
Manufacturer:
Rohm Semiconductor
Ventron No:
2465208-BC848CT116
Description:
TRANS NPN 30V 0.1A SST3
ECAD Model:
Datasheet:
BC848BW/B/C

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Specifications
Rohm Semiconductor BC848CT116 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BC848CT116.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    350mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    200MHz
  • Frequency - Transition
    200MHz
  • Power Dissipation-Max (Abs)
    0.35W
  • VCEsat-Max
    0.3 V
  • Collector-Base Capacitance-Max
    3pF
  • RoHS Status
    ROHS3 Compliant
Description
BC848CT116 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

BC848CT116 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 200MHz


BC848CT116 Applications
There are a lot of ROHM Semiconductor
BC848CT116 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC848CT116 More Descriptions
Trans GP BJT NPN 30V 0.1A 3-Pin SST T/R
TRANS NPN 30V 0.1A SST3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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