ON Semiconductor BC847CWT3G

Name: BC847CWT3G
Brand: ON Semiconductor
SKU: 2465335-BC847CWT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847CWT3G

Manufacturer:: ON Semiconductor

Ventron No:: 2465335-BC847CWT3G

Description:: TRANS NPN 45V 0.1A SOT-323

ECAD Model:

Datasheet:: BC847CWT3G

Specifications

ON Semiconductor BC847CWT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847CWT3G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847CWT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.

BC847CWT3G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847CWT3G Applications
There are a lot of ON Semiconductor
BC847CWT3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847CWT3G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A 150mW 3-Pin SC-70 T/R
Bipolar Transistors - BJT GENRL TRANSISTOR
Bipolar Transistor, Npn, 45V; Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhz Rohs Compliant: Yes |Onsemi BC847CWT3G

Certification