ON Semiconductor BC847BTT1G

Name: BC847BTT1G
Brand: ON Semiconductor
SKU: 2463142-BC847BTT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BTT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463142-BC847BTT1G

Description:: TRANS NPN 45V 0.1A SC75-3

ECAD Model:

Datasheet:: BC847BTT1G

Specifications

ON Semiconductor BC847BTT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847BTT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847*TT
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Height
900μm
Length
1.8mm
Width
900μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC847BTT1G Description
The ON Semiconductor BC847BTT1G is an NPN Bipolar Transistor housed in the SC?75/SOT?416 package.

BC847BTT1G Features
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;
AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and RoHS Compliant

BC847BTT1G Applications
General-purpose amplifier applications

BC847BTT1G More Descriptions

Cut Tape (CT) Surface Mount NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA ICBO 200mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
45V 225mW 200@2mA,5V 100mA NPN SOT-523(SC-75) Bipolar Transistors - BJT ROHS
ON Semi BC847BTT1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SC-75 | ON Semiconductor BC847BTT1G
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-416 T/R - Tape and Reel
BC Series 65 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-416
Transistor, BIPOL, NPN, 45V, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power
Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhz; Product Range:- Rohs Compliant: Yes |Onsemi BC847BTT1G.
TRANS, BIPOL, NPN, 45V, SC-75; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 450hFE; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification