Diodes Incorporated BC847BLP-7B
- Part Number:
- BC847BLP-7B
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463862-BC847BLP-7B
- Description:
- TRANS NPN 45V 0.1A DFN1006-3
- Datasheet:
- BC847BLP-7B
Diodes Incorporated BC847BLP-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BLP-7B.
- Factory Lead Time15 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation250mW
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC847
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current100mA
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
BC847BLP-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BLP-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP-7B Applications
There are a lot of Diodes Incorporated
BC847BLP-7B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.A 100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847BLP-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP-7B Applications
There are a lot of Diodes Incorporated
BC847BLP-7B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC847BLP-7B More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Trans, Npn, 45V, 0.1A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. BC847BLP-7B
Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Trans, Npn, 45V, 0.1A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. BC847BLP-7B
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