Diodes Incorporated BC847BFZ-7B

Name: BC847BFZ-7B
Brand: Diodes Incorporated
SKU: 2845545-BC847BFZ-7B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BFZ-7B

Manufacturer:: Diodes Incorporated

Ventron No:: 2845545-BC847BFZ-7B

Description:: TRANS NPN 45V 0.1A X2-DFN060

ECAD Model:

Datasheet:: BC847BFZ-7B

Specifications

Diodes Incorporated BC847BFZ-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BFZ-7B.

Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation
435mW
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Continuous Collector Current
100mA
RoHS Status
ROHS3 Compliant

Description

BC847BFZ-7B Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

BC847BFZ-7B Applications
There are a lot of Diodes Incorporated
BC847BFZ-7B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC847BFZ-7B More Descriptions

BC847BFZ Series 45 V 100 mA NPN Small Signal Transistor - X2-DFN0606-3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN SS Trans 435mW 45Vceo 0.435W 125mV
Trans, Npn, 45V, 0.1A, 150Deg C, 0.925W Rohs Compliant: Yes |Diodes Inc. BC847BFZ-7B

Certification