Nexperia USA Inc. BC807-25,215

Name: BC807-25,215
Brand: Nexperia USA Inc.
SKU: 2463103-BC807-25,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC807-25,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463103-BC807-25,215

Description:: TRANS PNP 45V 0.5A SOT23

ECAD Model:

Datasheet:: BC807-25,215

Specifications

Nexperia USA Inc. BC807-25,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC807-25,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC807
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-45V
Max Collector Current
-500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
VCEsat-Max
0.7 V
Height
1.1mm
RoHS Status
ROHS3 Compliant

Description

BC807-25,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.A maximum collector current of -500mA volts can be achieved.

BC807-25,215 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

BC807-25,215 Applications
There are a lot of Nexperia USA Inc.
BC807-25,215 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC807-25,215 More Descriptions

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TRANSISTOR BJT SMT PNP BC807 SOT23
Transistor, PNP, -45V, -500MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:80MHz; Power
Bipolar Transistor, Pnp, -45V, -500Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:500Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC807-25,215.
TRANSISTOR, PNP, -45V, -500MA, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 80MHz; Power Dissipation Pd: 250mW; DC Collector Current: -500mA; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-236AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: BC807 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C

Certification