Fairchild/ON Semiconductor BC559CTA
- Part Number:
- BC559CTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464842-BC559CTA
- Description:
- TRANS PNP 30V 0.1A TO-92
- Datasheet:
- BC559CTA
Fairchild/ON Semiconductor BC559CTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC559CTA.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOW NOISE
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating-100mA
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC559
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)-30V
- Emitter Base Voltage (VEBO)-5V
- hFE Min110
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC559CTA More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC559 Series 30 V 100 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT PNP 30V 0.1A 500mW 3-Pin TO-92 Fan-Fold
General Purpose Transistor, TO-92, PNP, 30V
30V 500mW 100mA 420@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -30V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 420hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
BC559 Series 30 V 100 mA Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT PNP 30V 0.1A 500mW 3-Pin TO-92 Fan-Fold
General Purpose Transistor, TO-92, PNP, 30V
30V 500mW 100mA 420@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, PNP, -30V, TO-92-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 420hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to BC559CTA.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminal FinishReach Compliance CodePin CountTerminal FormCase ConnectionRadiation HardeningView Compare
-
BC559CTAACTIVE (Last Updated: 5 days ago)6 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99LOW NOISEOther Transistors-30V500mWBOTTOMNOT SPECIFIED-100mA150MHzNOT SPECIFIEDBC559Not Qualified1Single500mWSWITCHING150MHzPNPPNP30V100mA420 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA30V150MHz-250mV30V-30V-5V1105.33mm5.2mm4.19mmNo SVHCROHS3 CompliantLead Free-------
-
---Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3-SILICON-55°C~150°C TJTape & Box (TB)2002e0-Obsolete1 (Unlimited)3EAR99EUROPEAN PART NUMBEROther Transistors-65V625mWBOTTOM235-100mA280MHz30BC556Not Qualified1Single625mWAMPLIFIER280MHzPNPPNP650mV100mA180 @ 2mA 5V100nA650mV @ 5mA, 100mA65V280MHz-300mV--80V5V180----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)not_compliant3---
-
ACTIVE (Last Updated: 4 days ago)2 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other Transistors-65V500mWBOTTOMNOT SPECIFIED-100mA150MHzNOT SPECIFIEDBC556Not Qualified1Single500mWSWITCHING150MHzPNPPNP65V100mA200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA65V150MHz-250mV65V-80V-5V1105.33mm5.2mm4.19mm-ROHS3 CompliantLead Free------
-
-7 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2002e3yesActive1 (Unlimited)3EAR99-Other Transistors45V500mWBOTTOM-100mA300MHz-BC550-1Single500mWSWITCHING300MHzNPNNPN45V100mA420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V300MHz250mV45V50V5V1104.58mm4.58mm3.86mmNo SVHCROHS3 CompliantLead Free---WIREISOLATEDNo
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 September 2023
Comprehensive Analysis of CR123A battery: Features, Applications and Purchase
Ⅰ. CR123A overviewThe CR123A battery, classified under the non-rechargeable (primary) category, is a high-performance power source with distinct specifications. Featuring a robust lithium manganese composition, it boasts a... -
13 September 2023
AT89S52-24PU Microcontroller Equivalent, Features and Working Principle
Ⅰ. AT89S52-24PU overviewAT89S52 is a low-voltage, high-performance 8-bit CMOS microcontroller with 8K bytes of in-circuit programmable flash memory (ISP). AT89S52 is a high-density non-volatile memory compatible with the... -
13 September 2023
The Difference Between CR2016 and CR2032 Button Batteries
Although CR2032 and CR2016 batteries are common coin-type batteries with similar appearance and the same voltage, they have obvious differences in power capacity and size. Below we will... -
14 September 2023
L7809CV Pin Connection, Technical Parameters and Features
Ⅰ. What is L7809CV?L7809CV is a linear voltage regulator with a fixed output voltage and is a type of three-terminal voltage regulator. It uses a series voltage stabilizing...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.