Fairchild/ON Semiconductor BC557TF
- Part Number:
- BC557TF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846658-BC557TF
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC557TF
Fairchild/ON Semiconductor BC557TF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557TF.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBC557
- Power - Max500mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition150MHz
BC557TF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC557TF Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
BC557TF Applications
There are a lot of ON Semiconductor
BC557TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC557TF Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
BC557TF Applications
There are a lot of ON Semiconductor
BC557TF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557TF More Descriptions
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R
The three parts on the right have similar specifications to BC557TF.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSurface MountHTS CodeJESD-30 CodeConfigurationPower Dissipation-Max (Abs)VCEsat-MaxLifecycle StatusFactory Lead TimeContact PlatingWeightPbfree CodeMax Breakdown VoltageHeightLengthWidthView Compare
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BC557TFThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Reel (TR)Obsolete1 (Unlimited)BC557500mWPNP110 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V100mA150MHz----------------------------------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC556-PNP180 @ 2mA 5V100nA650mV @ 5mA, 100mA---Through Hole3SILICON2002e03EAR99Tin/Lead (Sn/Pb)EUROPEAN PART NUMBEROther Transistors-65V625mWBOTTOM235not_compliant-100mA280MHz303Not Qualified1Single625mWAMPLIFIER280MHzPNP650mV100mA65V280MHz-300mV-80V5V180Non-RoHS CompliantContains Lead---------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA)150°C TJBulkObsolete1 (Unlimited)BC550500mWNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA100MHz--SILICON2009e33EAR99Matte Tin (Sn)LOW NOISEOther Transistors--BOTTOM250unknown--403Not Qualified1--AMPLIFIER-NPN---100MHz----ROHS3 Compliant-NO8541.21.00.95O-PBCY-T3SINGLE0.625W0.6 V---------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Reel (TR)Active1 (Unlimited)BC556-PNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA---Through Hole3SILICON2007e33EAR99--Other Transistors-65V500mWBOTTOMNOT SPECIFIED--100mA150MHzNOT SPECIFIED-Not Qualified1Single500mWSWITCHING150MHzPNP65V100mA65V150MHz-250mV-80V-5V110ROHS3 CompliantLead Free------ACTIVE (Last Updated: 4 days ago)2 WeeksTin240mgyes65V5.33mm5.2mm4.19mm
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