Fairchild/ON Semiconductor BC557_D11Z

Name: BC557_D11Z
Brand: Fairchild/ON Semiconductor
SKU: 2467568-BC557_D11Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC557_D11Z

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467568-BC557_D11Z

Description:: TRANS PNP 45V 0.1A TO-92

ECAD Model:

Datasheet:: BC557_D11Z

Specifications

Fairchild/ON Semiconductor BC557_D11Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC557_D11Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-45V
Max Power Dissipation
500mW
Current Rating
-100mA
Base Part Number
BC557
Element Configuration
Single
Gain Bandwidth Product
150MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Current - Collector (Ic) (Max)
100mA
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC557_D11Z Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.Collector current can be as low as 100mA volts at its maximum.

BC557_D11Z Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA

BC557_D11Z Applications
There are a lot of ON Semiconductor
BC557_D11Z applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC557_D11Z More Descriptions

Compliant Through Hole 110 PNP Lead Free TO-92-3 -100 mA 3
TRANS PNP 45V 0.1A TO-92
MOSFET N-CHANNEL 40V 51A 8WDFN

Product Comparison

The three parts on the right have similar specifications to BC557_D11Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Element Configuration

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Transition Frequency

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

Lifecycle Status

Factory Lead Time

Contact Plating

Weight

Pbfree Code

Frequency

Power Dissipation

Max Breakdown Voltage

Height

Length

Width

Terminal Form

Case Connection

REACH SVHC

Radiation Hardening

View Compare
BC557_D11Z

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-45V

500mW

-100mA

BC557

Single

150MHz

PNP

650mV

100mA

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

45V

100mA

-250mV

-50V

-5V

110

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC550C,112

NXP USA Inc.

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

150°C TJ

Bulk

Obsolete

1 (Unlimited)

-

-

-

BC550

-

-

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

100mA

-

-

-

-

ROHS3 Compliant

-

NO

SILICON

2009

e3

3

EAR99

Matte Tin (Sn)

LOW NOISE

8541.21.00.95

Other Transistors

BOTTOM

250

unknown

40

3

O-PBCY-T3

Not Qualified

1

SINGLE

500mW

AMPLIFIER

NPN

45V

100MHz

100MHz

0.625W

0.6 V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC557_D11Z vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

-65V

500mW

-100mA

BC556

Single

150MHz

PNP

65V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

-

-250mV

-80V

-5V

110

ROHS3 Compliant

Lead Free

-

SILICON

2007

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

1

-

-

SWITCHING

PNP

-

150MHz

-

-

-

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

240mg

yes

150MHz

500mW

65V

5.33mm

5.2mm

4.19mm

-

-

-

-

BC557_D11Z vs BC556BTFR
BC550CTA

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

150°C TJ

Tape & Box (TB)

Active

1 (Unlimited)

45V

500mW

100mA

BC550

Single

300MHz

NPN

45V

100mA

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

-

250mV

50V

5V

110

ROHS3 Compliant

Lead Free

-

SILICON

2002

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

-

-

-

-

-

-

1

-

-

SWITCHING

NPN

-

300MHz

-

-

-

-

7 Weeks

Tin

240mg

yes

300MHz

500mW

45V

4.58mm

4.58mm

3.86mm

WIRE

ISOLATED

No SVHC

No

BC557_D11Z vs BC550CTA