BC557,112

NXP USA Inc. BC557,112

Part Number:
BC557,112
Manufacturer:
NXP USA Inc.
Ventron No:
3069346-BC557,112
Description:
TRANS PNP 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC556, BC557

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Comments
Specifications
NXP USA Inc. BC557,112 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC557,112.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    250
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC557
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • Power Dissipation-Max (Abs)
    0.625W
  • VCEsat-Max
    0.65 V
  • RoHS Status
    ROHS3 Compliant
Description
BC557,112 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).

BC557,112 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz


BC557,112 Applications
There are a lot of NXP USA Inc.
BC557,112 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC557,112 More Descriptions
TRANS PNP 45V 0.1A TO-92
Product Comparison
The three parts on the right have similar specifications to BC557,112.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    VCEsat-Max
    RoHS Status
    Mount
    Number of Pins
    Additional Feature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Weight
    Pbfree Code
    Max Breakdown Voltage
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC557,112
    BC557,112
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    150°C TJ
    Bulk
    2009
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    8541.21.00.95
    Other Transistors
    BOTTOM
    250
    unknown
    40
    BC557
    3
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    500mW
    SWITCHING
    PNP
    PNP
    125 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    45V
    100mA
    100MHz
    100MHz
    0.625W
    0.65 V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BZL1
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2002
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    -
    Other Transistors
    BOTTOM
    235
    not_compliant
    30
    BC556
    3
    -
    Not Qualified
    1
    -
    -
    AMPLIFIER
    PNP
    PNP
    180 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    -
    -
    280MHz
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    3
    EUROPEAN PART NUMBER
    -65V
    625mW
    -100mA
    280MHz
    Single
    625mW
    280MHz
    650mV
    100mA
    65V
    -300mV
    -80V
    5V
    180
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    BC556
    -
    -
    Not Qualified
    1
    -
    -
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    -
    -
    150MHz
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    3
    -
    -65V
    500mW
    -100mA
    150MHz
    Single
    500mW
    150MHz
    65V
    100mA
    65V
    -250mV
    -80V
    -5V
    110
    Lead Free
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    240mg
    yes
    65V
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    150°C TJ
    Tape & Box (TB)
    2002
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    Other Transistors
    BOTTOM
    -
    -
    -
    BC550
    -
    -
    -
    1
    -
    -
    SWITCHING
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    300MHz
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    3
    -
    45V
    500mW
    100mA
    300MHz
    Single
    500mW
    300MHz
    45V
    100mA
    45V
    250mV
    50V
    5V
    110
    Lead Free
    -
    7 Weeks
    Tin
    240mg
    yes
    45V
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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