NXP USA Inc. BC557,112
- Part Number:
- BC557,112
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3069346-BC557,112
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC556, BC557
NXP USA Inc. BC557,112 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC557,112.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)250
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC557
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.65 V
- RoHS StatusROHS3 Compliant
BC557,112 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC557,112 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC557,112 Applications
There are a lot of NXP USA Inc.
BC557,112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC557,112 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC557,112 Applications
There are a lot of NXP USA Inc.
BC557,112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557,112 More Descriptions
TRANS PNP 45V 0.1A TO-92
The three parts on the right have similar specifications to BC557,112.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxRoHS StatusMountNumber of PinsAdditional FeatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeLifecycle StatusFactory Lead TimeContact PlatingWeightPbfree CodeMax Breakdown VoltageHeightLengthWidthTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC557,112Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulk2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown40BC5573O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGPNPPNP125 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V100mA100MHz100MHz0.625W0.65 VROHS3 Compliant--------------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJTape & Box (TB)2002e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)-Other TransistorsBOTTOM235not_compliant30BC5563-Not Qualified1--AMPLIFIERPNPPNP180 @ 2mA 5V100nA650mV @ 5mA, 100mA--280MHz---Non-RoHS CompliantThrough Hole3EUROPEAN PART NUMBER-65V625mW-100mA280MHzSingle625mW280MHz650mV100mA65V-300mV-80V5V180Contains Lead-------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)3EAR99--Other TransistorsBOTTOMNOT SPECIFIED-NOT SPECIFIEDBC556--Not Qualified1--SWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz---ROHS3 CompliantThrough Hole3--65V500mW-100mA150MHzSingle500mW150MHz65V100mA65V-250mV-80V-5V110Lead FreeACTIVE (Last Updated: 4 days ago)2 WeeksTin240mgyes65V5.33mm5.2mm4.19mm----
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Box (TB)2002e3Active1 (Unlimited)3EAR99--Other TransistorsBOTTOM---BC550---1--SWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA--300MHz---ROHS3 CompliantThrough Hole3-45V500mW100mA300MHzSingle500mW300MHz45V100mA45V250mV50V5V110Lead Free-7 WeeksTin240mgyes45V4.58mm4.58mm3.86mmWIREISOLATEDNo SVHCNo
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