Fairchild/ON Semiconductor BC556BU

Name: BC556BU
Brand: Fairchild/ON Semiconductor
SKU: 2846834-BC556BU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC556BU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2846834-BC556BU

Description:: TRANS PNP 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC556BU

Specifications

Fairchild/ON Semiconductor BC556BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC556BU.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
178.2mg
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
-65V
Max Power Dissipation
500mW
Current Rating
-100mA
Frequency
150MHz
Base Part Number
BC556
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Gain Bandwidth Product
150MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
650mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC556BU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.A maximum collector current of 100mA volts can be achieved.

BC556BU Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA

BC556BU Applications
There are a lot of ON Semiconductor
BC556BU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC556BU More Descriptions

100 mA, 65 V PNP Bipolar Junction Transistor - Epitaxial Silicon
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Bulk
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 8-PowerWDFN Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.1m Ω @ 40A, 10V 107A Tc -55°C~175°C TJ MOSFET N-CH 40V 107A 8WDFN

Product Comparison

The three parts on the right have similar specifications to BC556BU.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Transistor Application

Polarity/Channel Type

Transition Frequency

Surface Mount

HTS Code

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

Lifecycle Status

Factory Lead Time

Contact Plating

Pbfree Code

Max Breakdown Voltage

Height

Length

Width

View Compare
BC556BU

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

178.2mg

150°C TJ

Bulk

Obsolete

1 (Unlimited)

-65V

500mW

-100mA

150MHz

BC556

1

Single

500mW

150MHz

PNP

650mV

100mA

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

-250mV

-80V

-5V

110

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC556BZL1

ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

-

-55°C~150°C TJ

Tape & Box (TB)

Obsolete

1 (Unlimited)

-65V

625mW

-100mA

280MHz

BC556

1

Single

625mW

280MHz

PNP

650mV

100mA

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

65V

-300mV

-80V

5V

180

Non-RoHS Compliant

Contains Lead

SILICON

2002

e0

3

EAR99

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

Other Transistors

BOTTOM

235

not_compliant

30

3

Not Qualified

AMPLIFIER

PNP

280MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC556BU vs BC556BZL1
BC550C,112

NXP USA Inc.

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

150°C TJ

Bulk

Obsolete

1 (Unlimited)

-

-

-

-

BC550

1

-

-

-

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

-

ROHS3 Compliant

-

SILICON

2009

e3

3

EAR99

Matte Tin (Sn)

LOW NOISE

Other Transistors

BOTTOM

250

unknown

40

3

Not Qualified

AMPLIFIER

NPN

100MHz

NO

8541.21.00.95

O-PBCY-T3

SINGLE

500mW

45V

100mA

100MHz

0.625W

0.6 V

-

-

-

-

-

-

-

-

BC556BU vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

-65V

500mW

-100mA

150MHz

BC556

1

Single

500mW

150MHz

PNP

65V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

-250mV

-80V

-5V

110

ROHS3 Compliant

Lead Free

SILICON

2007

e3

3

EAR99

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

Not Qualified

SWITCHING

PNP

150MHz

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

yes

65V

5.33mm

5.2mm

4.19mm

BC556BU vs BC556BTFR