Fairchild/ON Semiconductor BC549B
- Part Number:
- BC549B
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467319-BC549B
- Description:
- TRANS NPN 30V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC549B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC549B.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureLOW NOISE
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionISOLATED
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency300MHz
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
BC549B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.300MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
BC549B Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC549B Applications
There are a lot of Rochester Electronics, LLC
BC549B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.300MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
BC549B Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC549B Applications
There are a lot of Rochester Electronics, LLC
BC549B applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC549B More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar junction transistor, NPN, 100 mA, 30 V, THT, TO-92, BC549B
BJT, TO-92, 30V, 100mA, NPN, 150°C
Bipolar junction transistor, NPN, 100 mA, 30 V, THT, TO-92, BC549B
BJT, TO-92, 30V, 100mA, NPN, 150°C
The three parts on the right have similar specifications to BC549B.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusPublishedECCN CodeBase Part NumberHTS CodeSubcategoryReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
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BC549BThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINLOW NOISEBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLEISOLATED500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA30V100mA300MHz300MHzROHS3 Compliant----------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e3yesObsolete1 (Unlimited)3Matte Tin (Sn)-BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE-625mWAMPLIFIERNPNNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHz300MHzRoHS Compliant2006EAR99BC54*------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)------------500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA-300MHz---BC547------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)e3-Obsolete1 (Unlimited)3Matte Tin (Sn)-BOTTOM250403O-PBCY-T3Not Qualified1SINGLE-500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHz100MHzROHS3 Compliant1999EAR99BC5468541.21.00.95Other Transistorsunknown0.625W0.6 V2013-06-14 00:00:00
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