NXP USA Inc. BC547C,116
- Part Number:
- BC547C,116
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2468101-BC547C,116
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC847 Series
NXP USA Inc. BC547C,116 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC547C,116.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)250
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC547
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.6 V
- RoHS StatusROHS3 Compliant
BC547C,116 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC547C,116 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC547C,116 Applications
There are a lot of NXP USA Inc.
BC547C,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC547C,116 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC547C,116 Applications
There are a lot of NXP USA Inc.
BC547C,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC547C,116 More Descriptions
TRANS NPN 45V 0.1A TO-92
Small Signal Bipolar Transistors
Audio Amplifiers BTL POWER AMPLIFIER
Small Signal Bipolar Transistors
Audio Amplifiers BTL POWER AMPLIFIER
The three parts on the right have similar specifications to BC547C,116.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxRoHS StatusPbfree CodeSource Url Status Check DateView Compare
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BC547C,116Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Reel (TR)2008e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown40BC5473O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V100mA100MHz100MHz0.625W0.6 VROHS3 Compliant---
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)---------BC546-----500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA-300MHz-----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)2006e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--BOTTOMNOT SPECIFIED-NOT SPECIFIEDBC54*3O-PBCY-T3Not Qualified1SINGLE625mWAMPLIFIERNPNNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHz300MHz--RoHS Compliantyes-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown40BC5463O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHz100MHz0.625W0.6 VROHS3 Compliant-2013-06-14 00:00:00
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