ON Semiconductor BC547BZL1G
- Part Number:
- BC547BZL1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469298-BC547BZL1G
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC547BZL1G
ON Semiconductor BC547BZL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC547BZL1G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
BC547BZL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-92-3 contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC547BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC547BZL1G Applications
There are a lot of Rochester Electronics, LLC
BC547BZL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-92-3 contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BC547BZL1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC547BZL1G Applications
There are a lot of Rochester Electronics, LLC
BC547BZL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC547BZL1G More Descriptions
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA 625mW 300MHz
ON Semi BC547BZL1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin TO-92 | ON Semiconductor BC547BZL1G
Trans GP BJT NPN 45V 0.1A 3-Pin TO-92 Ammo - Ammo Pack
TRANSISTORS BIPOLAR- GENERAL PURPOSE TO-92 100MA,50V, NPN - ROHS
TRANSISTOR, NPN, 45V, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor
ON Semi BC547BZL1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin TO-92 | ON Semiconductor BC547BZL1G
Trans GP BJT NPN 45V 0.1A 3-Pin TO-92 Ammo - Ammo Pack
TRANSISTORS BIPOLAR- GENERAL PURPOSE TO-92 100MA,50V, NPN - ROHS
TRANSISTOR, NPN, 45V, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor
The three parts on the right have similar specifications to BC547BZL1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusBase Part NumberSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyView Compare
-
BC547BZL1GThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)625mWNPN200 @ 2mA 5V15nA600mV @ 5mA, 100mA45V100mA300MHzROHS3 Compliant---------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-150°C TJTape & Box (TB)Obsolete1 (Unlimited)500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA300MHz-BC546-------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)625mWNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHzRoHS CompliantBC54*NOSILICON2006e3yes3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLEAMPLIFIERNPN300MHz
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-150°C TJBulkObsolete1 (Unlimited)500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA300MHz-BC547-------------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 February 2024
STM32F407VGT6 Microcontroller Replacements, Application Fields and Package
Ⅰ. STM32F407VGT6 overviewⅡ. STM32F407VGT6 parameter conditionsⅢ. STM32F407VGT6 application areasⅣ. Package of STM32F407VGT6Ⅴ. Hardware design and software design of STM32F407VGT6 microcontrollerⅥ. Absolute maximum ratings of STM32F407VGT6Ⅶ. How to evaluate... -
27 February 2024
LD7575PS Manufacturer, Advantages and Disadvantages and Other Details
Ⅰ. What is LD7575PS?Ⅱ. Pins and functions of LD7575PSⅢ. Manufacturer of LD7575PSⅣ. How does LD7575PS achieve stable output voltage?Ⅴ. Block diagram of LD7575PSⅥ. What is the performance of... -
27 February 2024
BQ32000DR Structure, Technical Parameters, Layout Guidelines and Applications
Ⅰ. Overview of BQ32000DRⅡ. Structure of BQ32000DRⅢ. Simplified schematic of BQ32000DRⅣ. Technical parameters of BQ32000DRⅤ. Layout guidelines for BQ32000DRⅥ. Where to use BQ32000DR?Ⅶ. How does the backup power... -
28 February 2024
An In-Depth Look at the TXS0108ERGYR: A Solution for Logic Level Conversion
Ⅰ. TXS0108ERGYR overviewⅡ. Specifications of TXS0108ERGYRⅢ. Recommended operating conditions of TXS0108ERGYRⅣ. Advantages of TXS0108ERGYRⅤ. Functional block diagram of TXSO108ERGYRⅥ. Application areas of TXS0108ERGYRⅦ. Wiring and circuit design of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.