BC547BZL1

ON Semiconductor BC547BZL1

Part Number:
BC547BZL1
Manufacturer:
ON Semiconductor
Ventron No:
2468106-BC547BZL1
Description:
TRANS NPN 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC546, 547, 548 Datasheet

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Specifications
ON Semiconductor BC547BZL1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC547BZL1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2005
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    EUROPEAN PART NUMBER
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    45V
  • Max Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BC547
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    300MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    200
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BC547BZL1 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

BC547BZL1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz


BC547BZL1 Applications
There are a lot of ON Semiconductor
BC547BZL1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC547BZL1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TRANS NPN 45V 0.1A TO-92
AFSM T6 60V SG NCH
Product Comparison
The three parts on the right have similar specifications to BC547BZL1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Surface Mount
    Pbfree Code
    Configuration
    View Compare
  • BC547BZL1
    BC547BZL1
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2005
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    EUROPEAN PART NUMBER
    8541.21.00.75
    Other Transistors
    45V
    625mW
    BOTTOM
    240
    not_compliant
    100mA
    30
    BC547
    3
    O-PBCY-T3
    Not Qualified
    1
    Single
    AMPLIFIER
    300MHz
    NPN
    NPN
    250mV
    100mA
    200 @ 2mA 5V
    15nA
    250mV @ 500μA, 10mA
    45V
    300MHz
    300mV
    50V
    6V
    200
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • BC546TA
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    150°C TJ
    Tape & Box (TB)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    BC546
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    110 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    -
    -
    -
    -
    -
    -
    500mW
    65V
    100mA
    300MHz
    -
    -
    -
  • BC547-AP
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2006
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    BOTTOM
    NOT SPECIFIED
    -
    -
    NOT SPECIFIED
    BC54*
    3
    O-PBCY-T3
    Not Qualified
    1
    -
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    110 @ 2mA 5V
    -
    300mV @ 5mA, 100mA
    -
    300MHz
    -
    -
    -
    -
    RoHS Compliant
    -
    625mW
    45V
    100mA
    300MHz
    NO
    yes
    SINGLE
  • BC547_J22Z
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    150°C TJ
    Bulk
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    BC547
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    110 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    -
    -
    -
    -
    -
    -
    -
    -
    500mW
    45V
    100mA
    300MHz
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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