Fairchild/ON Semiconductor BC547BNMBU
- Part Number:
- BC547BNMBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069294-BC547BNMBU
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC547BNMBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC547BNMBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBC547
- Power - Max500mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition300MHz
BC547BNMBU Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC547BNMBU Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
BC547BNMBU Applications
There are a lot of ON Semiconductor
BC547BNMBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC547BNMBU Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
BC547BNMBU Applications
There are a lot of ON Semiconductor
BC547BNMBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to BC547BNMBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyRoHS StatusHTS CodeSubcategoryReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
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BC547BNMBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)150°C TJBulkObsolete1 (Unlimited)BC547500mWNPN200 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA300MHz---------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC54*625mWNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHzNOSILICON2006e3yes3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLEAMPLIFIERNPN300MHzRoHS Compliant------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)150°C TJBulkObsolete1 (Unlimited)BC547500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA300MHz--------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)150°C TJTape & Box (TB)Obsolete1 (Unlimited)BC546500mWNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHzNOSILICON1999e3-3EAR99Matte Tin (Sn)BOTTOM250403O-PBCY-T3Not Qualified1SINGLESWITCHINGNPN100MHzROHS3 Compliant8541.21.00.95Other Transistorsunknown0.625W0.6 V2013-06-14 00:00:00
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