Fairchild/ON Semiconductor BC547ATA
- Part Number:
- BC547ATA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813376-BC547ATA
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC547ATA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC547ATA.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation500mW
- Terminal PositionBOTTOM
- Current Rating100mA
- Frequency300MHz
- Base Part NumberBC547
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC547ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC547ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC547ATA Applications
There are a lot of ON Semiconductor
BC547ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC547ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC547ATA Applications
There are a lot of ON Semiconductor
BC547ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC547ATA More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC547 Series 45 V 100 mA Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT NPN 45V 0.1A 500mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN 45V 100mA HFE/22
45V 500mW 100mA 110@2mA5V 300MHz 250mV@100mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
BC547 Series 45 V 100 mA Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT NPN 45V 0.1A 500mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN 45V 100mA HFE/22
45V 500mW 100mA 110@2mA5V 300MHz 250mV@100mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 500mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to BC547ATA.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationHTS CodeReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
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BC547ATAACTIVE (Last Updated: 6 days ago)2 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON150°C TJTape & Box (TB)2002e3yesActive1 (Unlimited)3EAR99Other Transistors45V500mWBOTTOM100mA300MHzBC5471Single500mWSWITCHING300MHzNPNNPN45V100mA110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V300MHz250mV45V50V6V1104.58mm4.58mm3.86mmNo SVHCNoROHS3 CompliantLead Free------------------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Box (TB)---Obsolete1 (Unlimited)--------BC546------NPN--110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA--------------500mW65V100mA300MHz-------------
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)2006e3yesObsolete1 (Unlimited)3EAR99---BOTTOM--BC54*1--AMPLIFIER-NPNNPN--110 @ 2mA 5V-300mV @ 5mA, 100mA-300MHz----------RoHS Compliant-625mW45V100mA300MHzNOMatte Tin (Sn)NOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not QualifiedSINGLE-----
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON150°C TJTape & Box (TB)1999e3-Obsolete1 (Unlimited)3EAR99Other Transistors--BOTTOM--BC5461--SWITCHING-NPNNPN--200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA-100MHz----------ROHS3 Compliant-500mW65V100mA100MHzNOMatte Tin (Sn)250403O-PBCY-T3Not QualifiedSINGLE8541.21.00.95unknown0.625W0.6 V2013-06-14 00:00:00
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