NXP USA Inc. BC547,116
- Part Number:
- BC547,116
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2467860-BC547,116
- Description:
- TRANS NPN 45V 0.1A TO-92
- Datasheet:
- BC847 Series
NXP USA Inc. BC547,116 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC547,116.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBC547
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.6 V
- RoHS StatusROHS3 Compliant
BC547,116 Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC547,116 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC547,116 Applications
There are a lot of NXP USA Inc.
BC547,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BC547,116 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC547,116 Applications
There are a lot of NXP USA Inc.
BC547,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC547,116 More Descriptions
100 Ma 45 V NPN Si Small Signal Transistor TO-92
Trans GP BJT NPN 45V 0.1A 3-Pin SPT T/R
LV49821VH-TLM-H 2-Channel Audio Amplifier IC, Class-AB Stereo, 13-Pin HSSOP
Trans GP BJT NPN 45V 0.1A 3-Pin SPT T/R
LV49821VH-TLM-H 2-Channel Audio Amplifier IC, Class-AB Stereo, 13-Pin HSSOP
The three parts on the right have similar specifications to BC547,116.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxRoHS StatusPbfree CodeSource Url Status Check DateView Compare
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BC547,116Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Reel (TR)2008e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDunknownNOT SPECIFIEDBC5473O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN110 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA45V100mA100MHz100MHz0.625W0.6 VROHS3 Compliant---
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)2006e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--BOTTOMNOT SPECIFIED-NOT SPECIFIEDBC54*3O-PBCY-T3Not Qualified1SINGLE625mWAMPLIFIERNPNNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHz300MHz--RoHS Compliantyes-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)---------BC547-----500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA-300MHz-----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown40BC5463O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHz100MHz0.625W0.6 VROHS3 Compliant-2013-06-14 00:00:00
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