Fairchild/ON Semiconductor BC546BTA

Name: BC546BTA
Brand: Fairchild/ON Semiconductor
SKU: 2463181-BC546BTA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC546BTA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463181-BC546BTA

Description:: TRANS NPN 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC546-50 Datasheet

Specifications

Fairchild/ON Semiconductor BC546BTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC546BTA.

Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240.007063mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC546
Number of Elements
1
Voltage
65V
Element Configuration
Single
Current
100mA
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC546BTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.

BC546BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC546BTA Applications
There are a lot of ON Semiconductor
BC546BTA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC546BTA More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC546 Series 65 V 100 mA 500 mW NPN Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN 65V 100mA HFE/450
65V 500mW 100mA 200@2mA5V 300MHz 250mV@100mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor, NPN, 65V, 0.1A, 0.5W, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:300MHz; Power
BIPOLAR TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage Max: 65V; Continuous Collector Current: 100mA; Power Dissipation: 500mW; Transistor Mounting: Through Hole; No. of Pins: 3Pins; Transi 82C0406

Product Comparison

The three parts on the right have similar specifications to BC546BTA.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Current Rating

Frequency

Base Part Number

Number of Elements

Voltage

Element Configuration

Current

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Surface Mount

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

View Compare
BC546BTA

Fairchild/ON Semiconductor

6 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240.007063mg

SILICON

150°C TJ

Tape & Box (TB)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

65V

500mW

BOTTOM

100mA

300MHz

BC546

1

65V

Single

100mA

500mW

SWITCHING

300MHz

NPN

NPN

65V

100mA

200 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

65V

300MHz

250mV

65V

80V

6V

110

4.58mm

4.58mm

3.86mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BC546TA

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-

150°C TJ

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

BC546

-

-

-

-

-

-

-

-

NPN

-

-

110 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500mW

65V

100mA

300MHz

-

-

-

-

-

-

-

-

BC546BTA vs BC546TA
BC547-AP

Micro Commercial Co

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2006

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

BOTTOM

-

-

BC54*

1

-

-

-

-

AMPLIFIER

-

NPN

NPN

-

-

110 @ 2mA 5V

-

300mV @ 5mA, 100mA

-

300MHz

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

625mW

45V

100mA

300MHz

NO

Matte Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

3

O-PBCY-T3

Not Qualified

SINGLE

BC546BTA vs BC547-AP
BC547_J22Z

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

-

150°C TJ

Bulk

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

BC547

-

-

-

-

-

-

-

-

NPN

-

-

110 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500mW

45V

100mA

300MHz

-

-

-

-

-

-

-

-

BC546BTA vs BC547_J22Z