ON Semiconductor BC546BRL1G
- Part Number:
- BC546BRL1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469354-BC546BRL1G
- Description:
- TRANS NPN 65V 0.1A TO-92
- Datasheet:
- BC546BRL1G
ON Semiconductor BC546BRL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC546BRL1G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
BC546BRL1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC546BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC546BRL1G Applications
There are a lot of Rochester Electronics, LLC
BC546BRL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.
BC546BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC546BRL1G Applications
There are a lot of Rochester Electronics, LLC
BC546BRL1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC546BRL1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA 625mW 300MHz
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
TRANSISTOR, NPN, 65V, 100MA, TO-92-3
Bipolar Transistor, Npn, 65V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:1.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC546BRL1G
TRANSISTOR, NPN, 65V, 100MA, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA 625mW 300MHz
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
TRANSISTOR, NPN, 65V, 100MA, TO-92-3
Bipolar Transistor, Npn, 65V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:1.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC546BRL1G
TRANSISTOR, NPN, 65V, 100MA, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
The three parts on the right have similar specifications to BC546BRL1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusBase Part NumberSurface MountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
-
BC546BRL1GThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)625mWNPN200 @ 2mA 5V15nA600mV @ 5mA, 100mA65V100mA300MHzROHS3 Compliant--------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-150°C TJTape & Box (TB)Obsolete1 (Unlimited)500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA300MHz-BC546------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)-150°C TJBulkObsolete1 (Unlimited)500mWNPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA300MHz-BC547------------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-150°C TJTape & Box (TB)Obsolete1 (Unlimited)500mWNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHzROHS3 CompliantBC546NOSILICON1999e33EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown403O-PBCY-T3Not Qualified1SINGLESWITCHINGNPN100MHz0.625W0.6 V2013-06-14 00:00:00
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