BC546BRL1G

ON Semiconductor BC546BRL1G

Part Number:
BC546BRL1G
Manufacturer:
ON Semiconductor
Ventron No:
2469354-BC546BRL1G
Description:
TRANS NPN 65V 0.1A TO-92
ECAD Model:
Datasheet:
BC546BRL1G

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Specifications
ON Semiconductor BC546BRL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC546BRL1G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package
    TO-92-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Power - Max
    625mW
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Current - Collector (Ic) (Max)
    100mA
  • Frequency - Transition
    300MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC546BRL1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 65V maximal voltage is present.

BC546BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3


BC546BRL1G Applications
There are a lot of Rochester Electronics, LLC
BC546BRL1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC546BRL1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA 625mW 300MHz
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
TRANSISTOR, NPN, 65V, 100MA, TO-92-3
Bipolar Transistor, Npn, 65V, To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:1.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC546BRL1G
TRANSISTOR, NPN, 65V, 100MA, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
Product Comparison
The three parts on the right have similar specifications to BC546BRL1G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    RoHS Status
    Base Part Number
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Transistor Application
    Polarity/Channel Type
    Transition Frequency
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Source Url Status Check Date
    View Compare
  • BC546BRL1G
    BC546BRL1G
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    TO-92-3
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    625mW
    NPN
    200 @ 2mA 5V
    15nA
    600mV @ 5mA, 100mA
    65V
    100mA
    300MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC546TA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    150°C TJ
    Tape & Box (TB)
    Obsolete
    1 (Unlimited)
    500mW
    NPN
    110 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    65V
    100mA
    300MHz
    -
    BC546
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC547_J22Z
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    150°C TJ
    Bulk
    Obsolete
    1 (Unlimited)
    500mW
    NPN
    110 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    100mA
    300MHz
    -
    BC547
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC546B,126
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    150°C TJ
    Tape & Box (TB)
    Obsolete
    1 (Unlimited)
    500mW
    NPN
    200 @ 2mA 5V
    15nA ICBO
    400mV @ 5mA, 100mA
    65V
    100mA
    100MHz
    ROHS3 Compliant
    BC546
    NO
    SILICON
    1999
    e3
    3
    EAR99
    Matte Tin (Sn)
    8541.21.00.95
    Other Transistors
    BOTTOM
    250
    unknown
    40
    3
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    SWITCHING
    NPN
    100MHz
    0.625W
    0.6 V
    2013-06-14 00:00:00
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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