ON Semiconductor BC373G
- Part Number:
- BC373G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585576-BC373G
- Description:
- TRANS NPN DARL 80V 1A TO-92
- Datasheet:
- BC372, 373
ON Semiconductor BC373G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC373G.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC373
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.1V @ 250μA, 250mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage1.1V
- Frequency - Transition200MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)12V
- hFE Min8000
- Continuous Collector Current1A
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BC373G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 200MHz.The maximum collector current is 1A volts.
BC373G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373G Applications
There are a lot of ON Semiconductor
BC373G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 200MHz.The maximum collector current is 1A volts.
BC373G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz
BC373G Applications
There are a lot of ON Semiconductor
BC373G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC373G More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA
Compliant Through Hole 8000 NPN Lead Free Bulk No SVHC TO-92-3
DARLINGTON TRANSISTOR, TO-92; Transistor Type:Bipolar Darlington; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:1.1V; Power Dissipation:625mW; Min Hfe:10000;;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 100mA; Device Marking: BC373; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 10000; Hfe NPN Device @ IC Min: 0.1; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole; Transistor Type: Darlington; Voltage Vcbo: 80V; Voltage Vceo Max: 80V
Compliant Through Hole 8000 NPN Lead Free Bulk No SVHC TO-92-3
DARLINGTON TRANSISTOR, TO-92; Transistor Type:Bipolar Darlington; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:1A; Voltage, Vce Sat Max:1.1V; Power Dissipation:625mW; Min Hfe:10000;;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 100mA; Device Marking: BC373; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 10000; Hfe NPN Device @ IC Min: 0.1; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole; Transistor Type: Darlington; Voltage Vcbo: 80V; Voltage Vceo Max: 80V
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