NXP USA Inc. A2T09VD250NR1
- Part Number:
- A2T09VD250NR1
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2848254-A2T09VD250NR1
- Description:
- IC TRANS RF LDMOS
- Datasheet:
- A2T09VD250NR1
NXP USA Inc. A2T09VD250NR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T09VD250NR1.
- Factory Lead Time10 Weeks
- Package / CaseTO-270-6 Variant, Flat Leads
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Voltage - Rated105V
- HTS Code8541.29.00.75
- Frequency920MHz
- Current - Test1A
- Transistor TypeLDMOS (Dual)
- Gain22.5dB
- Power - Output65W
- Voltage - Test48V
- RoHS StatusROHS3 Compliant
A2T09VD250NR1 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T09VD250NR1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T09VD250NR1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet A2T09VD250NR1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of A2T09VD250NR1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
A2T09VD250NR1 More Descriptions
RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
RF Power Transistor, 0.716 to 0.96 GHz, 65 W Avg., Typ. Gain in dB is 22.5 @ 920 MHz, 48 V, SOT1740-1, LDMOS
Trans MOSFET N-CH 105V 6-Pin TO-270WB T/R
RF Power Field-Effect Transistor
RF Power Transistor, 0.716 to 0.96 GHz, 65 W Avg., Typ. Gain in dB is 22.5 @ 920 MHz, 48 V, SOT1740-1, LDMOS
Trans MOSFET N-CH 105V 6-Pin TO-270WB T/R
RF Power Field-Effect Transistor
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