NXP USA Inc. A2T07D160W04SR3

Name: A2T07D160W04SR3
Brand: NXP USA Inc.
SKU: 2477424-A2T07D160W04SR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: A2T07D160W04SR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477424-A2T07D160W04SR3

Description:: FET RF 2CH 70V 803MHZ

ECAD Model:

Datasheet:: A2T07D160W04SR3

Specifications

NXP USA Inc. A2T07D160W04SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. A2T07D160W04SR3.

Factory Lead Time
10 Weeks
Package / Case
NI-780S-4
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
70V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
803MHz
Time@Peak Reflow Temperature-Max (s)
40
Current - Test
450mA
Transistor Type
LDMOS (Dual)
Gain
21.5dB
Power - Output
30W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

A2T07D160W04SR3 Description
For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz, this 30 W symmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.

A2T07D160W04SR3 Features
Wide Instantaneous Bandwidth Applications Designed
Improved Class C Operation with a Wider Negative Gate—Source Voltage Range
Capable of Withstanding Broadband Operating Conditions and Extremely High Output VSWR
For use with Digital Predistortion Error Correction Systems
in reel-to-reel. 250 Units, 32 mm Tape Width, 13-inch Reel; R3 Suffix.

A2T07D160W04SR3 Applications
Switching applications

A2T07D160W04SR3 More Descriptions

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
RF Power Transistor,716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826
Trans RF MOSFET N-CH 70V 5-Pin NI-780S T/R
IC BUS TRANSCEIVER 8BIT 20TVSOP

Certification