IDT, Integrated Device Technology Inc 6116LA20TDB

Name: 6116LA20TDB
Brand: IDT, Integrated Device Technology Inc
SKU: 3235688-6116LA20TDB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 6116LA20TDB

Manufacturer:: IDT, Integrated Device Technology Inc

Ventron No:: 3235688-6116LA20TDB

Description:: IC SRAM 16KBIT 20NS 24CDIP

ECAD Model:

Datasheet:: 6116LA20TDB

Specifications

IDT, Integrated Device Technology Inc 6116LA20TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116LA20TDB.

Factory Lead Time
15 Weeks
Mounting Type
Through Hole
Package / Case
24-CDIP (0.300, 7.62mm)
Operating Temperature
-55°C~125°C TA
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
SRAM - Asynchronous
Voltage - Supply
4.5V~5.5V
Base Part Number
IDT6116
Memory Size
16Kb 2K x 8
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Write Cycle Time - Word, Page
20ns
RoHS Status
Non-RoHS Compliant

Description

6116LA20TDB Overview
The Through Hole mounting type and 24-CDIP (0.300, 7.62mm) package/case make this product easy to install and secure. It has a wide operating temperature range of -55°C to 125°C TA, making it suitable for various environments. This product utilizes SRAM technology, providing fast and efficient data access. With a voltage supply of 4.5V to 5.5V, it offers reliable performance. The memory size is 16Kb, with a memory type of volatile and format of SRAM. The write cycle time for both word and page is 20ns, ensuring quick data transfer. This product is non-RoHS compliant.

6116LA20TDB Features
Package / Case: 24-CDIP (0.300, 7.62mm)

6116LA20TDB Applications
There are a lot of Renesas Electronics America Inc.
6116LA20TDB Memory applications.

cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,

6116LA20TDB More Descriptions

5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM

Product Comparison

The three parts on the right have similar specifications to 6116LA20TDB.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Base Part Number

Memory Size

Memory Type

Memory Format

Memory Interface

Write Cycle Time - Word, Page

RoHS Status

Supplier Device Package

Access Time

View Compare
6116LA20TDB

IDT, Integrated Device Technology Inc

15 Weeks

Through Hole

24-CDIP (0.300, 7.62mm)

-55°C~125°C TA

Tray

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

IDT6116

16Kb 2K x 8

Volatile

SRAM

Parallel

20ns

Non-RoHS Compliant

-

-

-
6116LA25SOGI8

IDT, Integrated Device Technology Inc

15 Weeks

Surface Mount

24-SOIC (0.295, 7.50mm Width)

-40°C~85°C TA

Tape & Reel (TR)

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

IDT6116

16Kb 2K x 8

Volatile

SRAM

Parallel

25ns

ROHS3 Compliant

24-SOIC

25ns

6116LA20TDB vs 6116LA25SOGI8
6116LA25SOG8

IDT, Integrated Device Technology Inc

10 Weeks

Surface Mount

24-SOIC (0.295, 7.50mm Width)

0°C~70°C TA

Tape & Reel (TR)

Active

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

IDT6116

16Kb 2K x 8

Volatile

SRAM

Parallel

25ns

ROHS3 Compliant

24-SOIC

25ns

6116LA20TDB vs 6116LA25SOG8
6116LA15SOGI8

IDT, Integrated Device Technology Inc

-

Surface Mount

24-SOIC (0.295, 7.50mm Width)

-40°C~85°C TA

Tape & Reel (TR)

Obsolete

1 (Unlimited)

SRAM - Asynchronous

4.5V~5.5V

IDT6116

16Kb 2K x 8

Volatile

SRAM

Parallel

15ns

-

24-SOIC

15ns

6116LA20TDB vs 6116LA15SOGI8