6116LA25TDB

IDT, Integrated Device Technology Inc 6116LA25TDB

Part Number:
6116LA25TDB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3836233-6116LA25TDB
Description:
IC SRAM 16KBIT 25NS 24CDIP
ECAD Model:
Datasheet:
6116LA25TDB

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Specifications
IDT, Integrated Device Technology Inc 6116LA25TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116LA25TDB.
  • Factory Lead Time
    15 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    24-CDIP (0.300, 7.62mm)
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Base Part Number
    IDT6116
  • Memory Size
    16Kb 2K x 8
  • Memory Type
    Volatile
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    25ns
  • RoHS Status
    Non-RoHS Compliant
Description
6116LA25TDB Overview
This product is a 24-CDIP (0.300, 7.62mm) package, designed to operate in a wide temperature range of -55°C to 125°C. The packaging is in tray form, ensuring safe transportation and storage. Currently, this product is in active production status. It has been classified with a Moisture Sensitivity Level (MSL) of 1, indicating that it has unlimited exposure time to ambient conditions. The voltage supply for this product ranges from 4.5V to 5.5V. With a memory size of 16Kb and a memory type of volatile, this product offers fast and efficient data storage. The write cycle time for both word and page is 25ns, ensuring quick and reliable data transfer. Please note that this product is currently non-RoHS compliant.

6116LA25TDB Features
Package / Case: 24-CDIP (0.300, 7.62mm)


6116LA25TDB Applications
There are a lot of Renesas Electronics America Inc.
6116LA25TDB Memory applications.


cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
6116LA25TDB More Descriptions
SRAM Chip Async Single 5V 16K-Bit 2K x 8 25ns 24-Pin CDIP
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Product Comparison
The three parts on the right have similar specifications to 6116LA25TDB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    Supplier Device Package
    Access Time
    View Compare
  • 6116LA25TDB
    6116LA25TDB
    15 Weeks
    Through Hole
    24-CDIP (0.300, 7.62mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    Non-RoHS Compliant
    -
    -
    -
  • 6116LA25SOG8
    10 Weeks
    Surface Mount
    24-SOIC (0.295, 7.50mm Width)
    0°C~70°C TA
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    ROHS3 Compliant
    24-SOIC
    25ns
  • 6116LA20TDB
    15 Weeks
    Through Hole
    24-CDIP (0.300, 7.62mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    20ns
    Non-RoHS Compliant
    -
    -
  • 6116LA150DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    150ns
    Non-RoHS Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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